Li Yang, Long Shibing, Liu Yang, Hu Chen, Teng Jiao, Liu Qi, Lv Hangbing, Suñé Jordi, Liu Ming
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
Nanoscale Res Lett. 2015 Dec;10(1):420. doi: 10.1186/s11671-015-1118-6. Epub 2015 Oct 26.
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.
本征缩小能力、简单的金属-绝缘体-金属（MIM）三明治结构、优异的性能以及与互补金属氧化物半导体（CMOS）技术兼容的制造工艺，使得电阻式随机存取存储器（RRAM）成为下一代存储器最有前景的候选者之一。RRAM器件还表现出丰富的电学、热学、磁学和光学效应，这与丰富的电阻开关（RS）材料、金属氧化物界面以及多种RS机制密切相关，这些机制包括RS层中纳米级到原子级导电细丝（CF）的形成/断裂。在RRAM的原子级CF中观察到了电导量子化效应，这为深入研究介观尺度下的RS机制提供了一个很好的机会。在这篇综述论文中，首先介绍了RRAM的工作原理，接着总结了RRAM中的基本电导量子化现象以及相关的RS机制、器件结构和材料体系。然后，我们讨论了RRAM中量子输运的理论和建模。最后，我们阐述了量子化RRAM器件面临的机遇和挑战以及我们对未来前景的看法。
