Lippertz Gertjan, Breunig Oliver, Fister Rafael, Uday Anjana, Bliesener Andrea, Brede Jens, Taskin Alexey, Ando Yoichi
Physics Institute II, University of Cologne, D-50937 Köln, Germany.
ACS Appl Mater Interfaces. 2024 Aug 7;16(31):41293-41299. doi: 10.1021/acsami.4c06146. Epub 2024 Jul 25.
Selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a prepatterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been no report of SAE-grown TI structures that are bulk-insulating. Here we report the successful growth of Hall-bars and nanowires of bulk-insulating TIs using the SAE technique. Their transport properties show that the quality of the selectively grown structures is comparable to that of bulk-insulating TI films grown on pristine substrates. In SAE-grown TI nanowires, we were able to observe Aharonov-Bohm-like magnetoresistance oscillations that are characteristic of the quantum-confined topological surface states. The availability of bulk-insulating TI nanostructures via the SAE technique opens the possibility to fabricate intricate topological devices in a scalable manner.
选择性区域外延（SAE）是一种在预图案化衬底上生长具有所需形状的外延薄膜的有用技术。尽管过去已经进行了图案化拓扑绝缘体（TI）薄膜的SAE，但尚未有关于通过SAE生长的体绝缘TI结构的报道。在此，我们报告了使用SAE技术成功生长体绝缘TI的霍尔条和纳米线。它们的输运特性表明，选择性生长结构的质量与在原始衬底上生长的体绝缘TI薄膜相当。在通过SAE生长的TI纳米线中，我们能够观察到类似阿哈罗诺夫 - 玻姆的磁阻振荡，这是量子限制拓扑表面态的特征。通过SAE技术获得体绝缘TI纳米结构为以可扩展方式制造复杂的拓扑器件开辟了可能性。
