Kumar Santosh, Battabyal Manjusha, Sethupathi Kanikrishnan, Satapathy Dillip K
Soft Materials Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, Tamil Nadu, India.
ARCI, IIT Madras Research Park, Chennai 600113, Tamil Nadu, India.
ACS Appl Mater Interfaces. 2024 Aug 7;16(31):40848-40857. doi: 10.1021/acsami.4c05537. Epub 2024 Jul 26.
We report the magnificent thermoelectric properties of the n-type AgSe film printed onto a flexible polyimide (PI) substrate. The orthorhombic β-AgSe phase of the processed AgSe film is confirmed from the X-ray diffractogram. Remarkably, the resulting AgSe/PI film exhibits outstanding thermoelectric properties, boasting maximum power factors of 1.4 and 2.1 mW/mK at 300 and 405 K, respectively. Furthermore, the flexibility of the AgSe/PI film remains intact even after undergoing 1500 bending cycles with no degradation observed in its thermoelectric performance. To demonstrate the practical application of our findings, a flexible thermoelectric prototype is constructed using the fabricated AgSe/PI films, which can harvest an impressive output voltage of 52 mV across a temperature difference of 53 K. Additionally, the prototype generates a maximum power output of 7.2 μW with a 40 K temperature difference and can produce 13 mV output voltage when subjected to around a 10 K temperature gradient when the cold side temperature is maintained at 308 K. Moreover, leveraging body heat with just a 1 K temperature variance between the body and the surrounding environment, the prototype could yield an impressive voltage output of 1.6 mV, marking the highest reported voltage output from human body heat to date. Our study not only introduces a cost-effective method for producing high-performance flexible thermoelectric films but also highlights their potential applications in wearable and implantable electronics.
我们报道了印刷在柔性聚酰亚胺(PI)衬底上的n型AgSe薄膜优异的热电性能。从X射线衍射图确认了加工后的AgSe薄膜的正交β-AgSe相。值得注意的是,所得的AgSe/PI薄膜表现出出色的热电性能,在300 K和405 K时的最大功率因子分别为1.4和2.1 mW/mK。此外,即使经过1500次弯曲循环,AgSe/PI薄膜的柔韧性依然完好,其热电性能未观察到降解。为了证明我们研究结果的实际应用,使用制备的AgSe/PI薄膜构建了一个柔性热电原型,在53 K的温差下能够收获高达52 mV的令人印象深刻的输出电压。此外,该原型在40 K的温差下产生的最大功率输出为7.2 μW,当冷端温度保持在308 K时,在约10 K的温度梯度下可产生13 mV的输出电压。此外,利用人体与周围环境之间仅1 K的温度差异所产生的体热,该原型能够产生1.6 mV的令人印象深刻的电压输出,这是迄今为止报道的从人体热量获得的最高电压输出。我们的研究不仅介绍了一种生产高性能柔性热电薄膜的经济有效方法,还突出了它们在可穿戴和植入式电子设备中的潜在应用。