Zhang Junze, Nisar Mohammad, Xu Hanwen, Li Fu, Zheng Zhuanghao, Liang Guangxing, Fan Ping, Chen Yue-Xing
Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
ACS Appl Mater Interfaces. 2023 Oct 11;15(40):47158-47167. doi: 10.1021/acsami.3c12486. Epub 2023 Oct 2.
Herein, an n-type AgSe thermoelectric flexible thin film has been fabricated on a polyimide (PI) substrate via a novel thermal diffusion method, and the thermoelectric performance is well-optimized by adjusting the pressure and temperature of thermal diffusion. All of the AgSe films are beneficial to grow (013) preferred orientations, which is conducive to performing a high Seebeck coefficient. By increasing the thermal diffusion temperature, the electrical conductivity can be rationally regulated while maintaining the independence of the Seebeck coefficient, which is mainly attributed to the increased electric mobility. As a result, the fabricated AgSe thin film achieves a high power factor of 18.25 μW cm K at room temperature and a maximum value of 21.7 μW cm K at 393 K. Additionally, the thermal diffusion method has resulted in a wave-shaped buckling, which is further verified as a promising structure to realize a larger temperature difference by the simulation results of finite element analysis (FEA). Additionally, this unique surface morphology of the AgSe thin film also exhibits outstanding mechanical properties, for which the elasticity modulus is only 0.42 GPa. Finally, a flexible round-shaped module assembled with SbTe has demonstrated an output power of 166 nW at a temperature difference of 50 K. This work not only introduces a new method of preparing AgSe thin films but also offers a convincing strategy of optimizing the microstructure to enhance low-grade heat utilization efficiency.
在此，通过一种新颖的热扩散方法在聚酰亚胺（PI）衬底上制备了一种n型AgSe热电柔性薄膜，并且通过调节热扩散的压力和温度对热电性能进行了很好的优化。所有的AgSe薄膜都有利于生长（013）择优取向，这有利于实现高塞贝克系数。通过提高热扩散温度，可以在保持塞贝克系数独立性的同时合理调节电导率，这主要归因于电子迁移率的增加。结果，制备的AgSe薄膜在室温下实现了18.25 μW cm K的高功率因子，在393 K时达到最大值21.7 μW cm K。此外，热扩散方法导致了波浪形屈曲，有限元分析（FEA）的模拟结果进一步证实这是一种有望实现更大温差的结构。此外，AgSe薄膜这种独特的表面形态还表现出出色的机械性能，其弹性模量仅为0.42 GPa。最后，一个与SbTe组装的柔性圆形模块在50 K的温差下展示了166 nW的输出功率。这项工作不仅介绍了一种制备AgSe薄膜的新方法，还提供了一种优化微观结构以提高低品位热利用效率的令人信服的策略。
