Lan Ye-Shun, Chen Chia-Ju, Kuo Shu-Hua, Lin Yen-Hui, Huang Angus, Huang Jing-Yue, Hsu Pin-Jui, Cheng Cheng-Maw, Jeng Horng-Tay
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan.
National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan.
ACS Nano. 2024 Aug 13;18(32):20990-20998. doi: 10.1021/acsnano.4c01322. Epub 2024 Jul 31.
Two-dimensional topological insulators (2D TIs) have distinct electronic properties that make them attractive for various applications, especially in spintronics. The conductive edge states in 2D TIs are protected from disorder and perturbations and are spin-polarized, which restrict current flow to a single spin orientation. In contrast, topological nodal line semimetals (TNLSM) are distinct from TIs because of the presence of a 1D ring of degeneracy formed from two bands that cross each other along a line in the Brillouin zone. These nodal lines are protected by topology and can be destroyed only by breaking certain symmetry conditions, making them highly resilient to disorder and defects. However, 2D TNLSMs do not possess protected boundary modes, which makes their investigation challenging. There have been several theoretical predictions of 2D TNLSMs, however, experimental realizations are rare. β-Sn, a metallic allotrope of tin with a superconducting temperature of 3.72 K, may be a candidate for a topological superconductor that can host Majorana Fermions for quantum computing. In this work, single layers of α-Sn and β-Sn on a Cu(111) substrate are successfully prepared and studied using scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and density functional theory calculations. The lattice and electronic structure undergo a topological transition from 2D topological insulator α-Sn to 2D TNLSM β-Sn, with two types of nodal lines coexisting in monolayer β-Sn. Such a realization of two types of nodal lines in one 2D material has not been reported to date. Moreover, we also observed an unexpected phenomenon of freestanding-like electronic structures of β-Sn/Cu(111), highlighting the potential of ultrathin β-Sn films as a platform for exploring the electronic properties of 2D TNLSM and topological superconductors, such as few-layer superconducting β-Sn in lateral contact with topological nodal line single-layer β-Sn.
二维拓扑绝缘体(2D TIs)具有独特的电子特性,这使其在各种应用中具有吸引力,特别是在自旋电子学领域。2D TIs中的导电边缘态不受无序和微扰影响且具有自旋极化特性,这将电流流动限制在单一自旋取向上。相比之下,拓扑节线半金属(TNLSM)与TIs不同,因为存在由两个能带在布里渊区沿一条线相互交叉形成的一维简并环。这些节线受拓扑保护,只有打破某些对称条件才能被破坏,这使得它们对无序和缺陷具有高度弹性。然而,二维TNLSM不具备受保护的边界模式,这使得对其进行研究具有挑战性。虽然已有一些关于二维TNLSM的理论预测,但实验实现却很少见。β-Sn是锡的一种金属同素异形体,超导温度为3.72 K,可能是一种能够承载用于量子计算的马约拉纳费米子的拓扑超导体候选材料。在这项工作中,利用扫描隧道显微镜、角分辨光电子能谱和密度泛函理论计算成功制备并研究了Cu(111)衬底上的单层α-Sn和β-Sn。晶格和电子结构经历了从二维拓扑绝缘体α-Sn到二维TNLSM β-Sn的拓扑转变,在单层β-Sn中两种类型的节线共存。迄今为止,尚未报道过在一种二维材料中实现两种类型节线的情况。此外,我们还观察到β-Sn/Cu(111)出现了类似自由站立的电子结构这一意外现象,突出了超薄β-Sn薄膜作为探索二维TNLSM和拓扑超导体电子特性平台的潜力,例如与拓扑节线单层β-Sn横向接触的少层超导β-Sn。