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高带隙硫化铅量子点的合成与加工策略:太阳能电池中收集高能光子的有前途候选材料。

Synthesis and Processing Strategy for High-Bandgap PbS Quantum Dots: A Promising Candidate for Harvesting High-Energy Photons in Solar Cells.

作者信息

Shinde Dipak Dattatray, Sharma Anjali, Dambhare Neha V, Mahajan Chandan, Biswas Arindam, Mitra Anurag, Rath Arup K

机构信息

CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India.

Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India.

出版信息

ACS Appl Mater Interfaces. 2024 Aug 14;16(32):42522-42533. doi: 10.1021/acsami.4c09364. Epub 2024 Aug 1.

DOI:10.1021/acsami.4c09364
PMID:39087921
Abstract

The wide tunability of the energy bandgap of colloidal lead sulfide (PbS) quantum dots (QDs) has uniquely positioned them for the development of single junction and tandem solar cells. While there have been substantial advancements in moderate and narrow bandgap PbS QDs-ideal for single junction solar cells and the bottom cell in tandem solar cells, respectively; progress has been limited in high-bandgap PbS QDs that are ideally suited for the formation of the top cell in tandem solar cells. The development of appropriate high bandgap PbS QDs would be a major advancement toward realizing efficient all-QD tandem solar cells utilizing different sizes of PbS QDs. Here, we report a comprehensive approach encompassing synthetic strategy, ligand engineering, and hole transport layer (HTL) modification to implement high-bandgap PbS QDs into solar cell devices. We achieved a greater degree of size homogeneity in high-bandgap PbS QDs through the use of a growth retarding agent and a partial passivation strategy. By adjusting the ligand polarity, we successfully grow HTL over the QD film to fabricate solar cells. With the aid of an interface modifying layer, we incorporated an organic HTL for the realization of high-performance solar cells. These solar cells exhibited an impressive open-circuit voltage of 0.824 V and a power conversion efficiency of 10.7%, marking a 360% improvement over previous results.

摘要

胶体硫化铅(PbS)量子点(QD)的能带隙具有广泛的可调性,这使其在单结和串联太阳能电池的开发中具有独特的地位。虽然在中带隙和窄带隙PbS量子点方面已经取得了重大进展,分别适用于单结太阳能电池和串联太阳能电池的底部电池;但在高带隙PbS量子点方面进展有限,而高带隙PbS量子点非常适合用于形成串联太阳能电池的顶部电池。开发合适的高带隙PbS量子点将是朝着实现利用不同尺寸的PbS量子点的高效全量子点串联太阳能电池迈出的重要一步。在此,我们报告了一种综合方法,包括合成策略、配体工程和空穴传输层(HTL)改性,以将高带隙PbS量子点应用于太阳能电池器件。通过使用生长阻滞剂和部分钝化策略,我们在高带隙PbS量子点中实现了更高程度的尺寸均匀性。通过调整配体极性,我们成功地在量子点薄膜上生长了HTL以制造太阳能电池。借助界面改性层,我们引入了一种有机HTL以实现高性能太阳能电池。这些太阳能电池表现出令人印象深刻的0.824 V开路电压和10.7%的功率转换效率,比之前的结果提高了360%。

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