Fan Linlin, Wang Lei, He Haiyan, Yang Deren, Li Dongsheng
Opt Lett. 2024 Aug 1;49(15):4066-4069. doi: 10.1364/OL.524572.
Tin-doped germanium quantum dots (Sn-doped Ge QDs)-decorated hexagonal silicon nanowires (h-Si NWs) were adopted to overcome the low infrared response of silicon and the excess dark current of germanium. High-quality Sn-doped Ge QDs with a narrow bandgap can be achieved through Ge-Sn co-sputtering on silicon nanowires by reducing the contact area between heterojunction materials and Sn-induced germanium crystallization. The absorption limit of the heterostructure is extended to 2.2 µm, and it is sensitive to 375-1550 nm light at 0 V, which has optimality at 1342 nm, with a photo-to-dark current ratio of over 815, a responsivity of 0.154 A/W, and a response time of 0.93 ms. The superior performance of the Sn-doped Ge QDs/h-Si NW photodetector in multiwavelength is attractive for multi-scenario applications.
采用锡掺杂锗量子点（Sn掺杂Ge量子点）修饰的六方硅纳米线（h-Si NWs）来克服硅的低红外响应和锗的过量暗电流问题。通过在硅纳米线上进行Ge-Sn共溅射，减少异质结材料之间的接触面积并诱导锗结晶，可制备出具有窄带隙的高质量Sn掺杂Ge量子点。该异质结构的吸收极限扩展到2.2 µm，在0 V时对375 - 1550 nm光敏感，在1342 nm处具有最优性能，光暗电流比超过815，响应度为0.154 A/W，响应时间为0.93 ms。Sn掺杂Ge量子点/h-Si NW光电探测器在多波长方面的优异性能对多场景应用具有吸引力。
