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Bottom Contact Engineering for Ambient Fabrication of >25% Durable Perovskite Solar Cells.

作者信息

Yuan Ligang, Zou Shibing, Zhang Kaicheng, Huang Peng, Dong Yuyan, Wang Jiarong, Fan Kezhou, Lam Man Yu, Wu Xiao, Cheng Wei, Tang Ruijia, Chen Wenhao, Liu Weiqing, Wong Kam Sing, Yan Keyou

机构信息

Key Laboratory for Optoelectronic Information Perception and Instrumentation of Jiangxi Province, Key Laboratory of Nondestructive Testing Ministry of Education, School of the Testing and Photoelectric Engineering, Nanchang Hangkong University, Nanchang, 330063, China.

School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China.

出版信息

Adv Mater. 2024 Oct;36(41):e2409261. doi: 10.1002/adma.202409261. Epub 2024 Aug 2.

DOI:10.1002/adma.202409261
PMID:39092687
Abstract

The bottom contact in perovskite solar cells (PSCs) is easy to cause deep trap states and severe instability issues, especially under maximum power point tracking (MPPT). In this study, sodium gluconate (SG) is employed to disperse tin oxide (SnO) nanoparticles (NPs) and regulate the interface contact at the buried interface. The SG-SnO electron transfer layer (ETL) enabled the deposition of pinhole-free perovskite films in ambient air and improved interface contact by bridging effect. SG-SnO PSCs achieved an impressive power conversion efficiency (PCE) of 25.34% (certified as 25.17%) with a high open-circuit voltage (V) exceeding 1.19 V. The V loss is less than 0.34 V relative to the 1.53 eV bandgap, and the fill factor (FF) loss is only 2.02% due to the improved contact. The SG-SnO PSCs retained around 90% of their initial PCEs after 1000 h operation (T = 1000 h), higher than T = 1000 h for the control SnO PSC. Microstructure analysis revealed that light-induced degradation primarily occurred at the buried holes and grain boundaries and highlighted the importance of bottom-contact engineering.

摘要

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