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解析零维锑(III)掺杂卤化铟(III)杂化物中的结构-光物理性质相关性

Discerning the Structure-Photophysical Property Correlation in Zero-Dimensional Antimony(III)-Doped Indium(III) Halide Hybrids.

作者信息

Shamla Alisha Basheer, Sarma Dhritismita, Kumar Das Deep, Anilkumar Vishnu, Bakthavatsalam Rangarajan, Mahata Arup, Kundu Janardan

机构信息

Indian Institute of Science Education and Research (IISER) Tirupati, Tirupati, Andhra Pradesh 517507, India.

Indian Institute of Technology Hyderabad Sangareddy, Kandi, Telangana 502284, India.

出版信息

J Phys Chem Lett. 2024 Aug 15;15(32):8224-8232. doi: 10.1021/acs.jpclett.4c01839. Epub 2024 Aug 5.

DOI:10.1021/acs.jpclett.4c01839
PMID:39102307
Abstract

Zero-dimensional (0D) metal halide hybrids incorporating optically emissive Sb dopants have received huge research attention as a result of dopant-based visible emission for lighting and scintillation applications. Indeed, there have been a plethora of reports on Sb doping of indium halide (In-X)-based 0D hybrids that show strong dopant emission with varied emission wavelengths (λ) and photoluminescence quantum yields (PLQYs). However, discerning the structure-luminescence relation in these 0D-doped hybrids remains challenging because it necessitates exquisite synthetic control on the local metal (dopant) halide geometry/site asymmetry. Demonstrated here is synthetic control that allows tuning of the local metal halide geometry of the Sb dopants in 0D In-X hybrids utilizing five different organic cations. Experimental analysis of the series of Sb-doped In-X hybrids reveals a strong correlation between the extent of local metal halide geometry distortion and their photophysical properties (λ and PLQY). Density functional theory calculations of the doped compounds, characterizing ground- and excited-state structural distortions and energetics, reveal the origin of the extent of luminescence behavior. The experimental-computational results reported herein unravel the operative structure-luminescence relation in 0D Sb-doped In-X hybrids, provide insight into the emission mechanism, and open up avenues toward rational synthesis of strongly emissive materials with desired emission color for targeted applications.

摘要

由于掺杂剂基可见光发射可用于照明和闪烁应用,包含光学发射性锑掺杂剂的零维(0D)金属卤化物杂化物受到了广泛的研究关注。事实上,已有大量关于卤化铟(In-X)基0D杂化物中锑掺杂的报道,这些杂化物显示出具有不同发射波长(λ)和光致发光量子产率(PLQYs)的强掺杂剂发射。然而,识别这些0D掺杂杂化物中的结构-发光关系仍然具有挑战性,因为这需要对局部金属(掺杂剂)卤化物几何结构/位点不对称性进行精确的合成控制。本文展示了一种合成控制方法,该方法允许利用五种不同的有机阳离子来调节0D In-X杂化物中锑掺杂剂的局部金属卤化物几何结构。对一系列锑掺杂In-X杂化物的实验分析揭示了局部金属卤化物几何结构畸变程度与其光物理性质(λ和PLQY)之间的强相关性。对掺杂化合物的密度泛函理论计算,表征了基态和激发态的结构畸变和能量学,揭示了发光行为程度的起源。本文报道的实验-计算结果揭示了0D锑掺杂In-X杂化物中起作用的结构-发光关系,深入了解了发射机制,并为合理合成具有所需发射颜色的强发射材料以用于目标应用开辟了道路。

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