Idosa Dula Adugna, Abebe Mulualem, Mani Dhakshnamoorthy, Paduvilan Jibin Keloth, Thottathi Lishin, Thankappan Aparna, Thomas Sabu, Kim Jung Yong
Faculty of Materials Science and Engineering, Jimma Institute of Technology, Jimma University P. O. Box 378 Jimma Ethiopia.
Department of Physics, College of Natural and Computational Science, Mizan-Tepi University P. O. Box 260 Mizan Ethiopia.
Nanoscale Adv. 2024 Jun 18;6(16):4137-4148. doi: 10.1039/d4na00423j. eCollection 2024 Aug 6.
Over more than a decade, lead halide perovskites (LHPs) have been popular as a next-generation semiconductor for optoelectronics. Later, all-inorganic CsPbX (X = Cl, Br, and I) nanocrystals (NCs) were synthesized supersaturated recrystallization (SR) at room temperature (RT). However, compared to the hot injection (HI) method, the formation mechanism of NCs SR-RT has not been well studied. Hence, this study will contribute to elucidating SR-RT based on the LaMer model and Hansen solubility parameter. Herein, we also demonstrate the entropy-driven mixing between two dissimilar polar-nonpolar (DMF-toluene) solvents. Next, we find that, in a poor solvent (toluene ≫ DMF in volume), ∼60 nm sized CsPbBr NCs were synthesized in one step, whereas in a marginal solvent (toluene ≈ DMF), ∼3.5 nm sized NCs were synthesized in two steps, indicating the importance of solvent polarity, specifically the 'solubility parameter'. In addition, in the presence of a CuBr additive, high-quality cubic NCs (with ∼3.8 nm and ∼21.4 nm edge sizes) were synthesized. Hence, through this study, we present a 'solubility parameter-based nanocrystal-size control model' for SR-RT processes.
十多年来,卤化铅钙钛矿(LHPs)作为下一代光电子半导体一直备受关注。后来,通过室温(RT)下的过饱和重结晶(SR)合成了全无机CsPbX(X = Cl、Br和I)纳米晶体(NCs)。然而,与热注入(HI)方法相比,基于SR-RT的NCs形成机制尚未得到充分研究。因此,本研究将有助于基于LaMer模型和汉森溶解度参数阐明SR-RT。在此,我们还展示了两种不同的极性-非极性(DMF-甲苯)溶剂之间的熵驱动混合。接下来,我们发现,在不良溶剂(甲苯在体积上远大于DMF)中,一步合成了尺寸约为60 nm的CsPbBr NCs,而在边缘溶剂(甲苯≈DMF)中,两步合成了尺寸约为3.5 nm的NCs,这表明溶剂极性的重要性,特别是“溶解度参数”。此外,在CuBr添加剂存在的情况下,合成了高质量的立方NCs(边缘尺寸约为3.8 nm和21.4 nm)。因此,通过本研究,我们提出了一种用于SR-RT过程的“基于溶解度参数的纳米晶体尺寸控制模型”。