Silkunas Mantas, Pakhomova Olga N, Silkuniene Giedre, Pakhomov Andrei G
Frank Reidy Research Center for Bioelectrics, Old Dominion University VA, Norfolk USA.
Cell Stress. 2024 Aug 9;8:69-82. doi: 10.15698/cst2024.08.298. eCollection 2024.
Exceeding physiological limits of the cell membrane potential compromises structural integrity, enabling the passage of normally impermeant solutes and disrupting cell function. Electropermeabilization has been studied extensively at the cellular scale, but not at the individual membrane lesion level. We employed fast total internal reflection fluorescence (TIRF) imaging of Ca entry transients to discern individual lesions in a hyperpolarized cell membrane and characterize their focality, thresholds, electrical conductance, and the lifecycle. A diffuse and momentary membrane permeabilization without a distinct pore formation was observed already at a -100 mV threshold. Polarizing down to -200 mV created focal pores with a low 50- to 300-pS conductance, which disappeared instantly once the hyperpolarization was removed. Charging to -240 mV created high-conductance (> 1 nS) pores which persisted for seconds even at zero membrane potential. With incremental hyperpolarization steps, persistent pores often emerged at locations different from those where the short-lived, low-conductance pores or diffuse permeabilization were previously observed. Attempts to polarize membrane beyond the threshold for the formation of persistent pores increased their conductance adaptively, preventing further potential build-up and "clamping" it at a certain limit (-270 ± 6 mV in HEK cells, -284 ± 5 mV in CHO cells, and -243 ± 9 mV in neurons). The data suggest a previously unknown role of electroporative lesions as a protective mechanism against a potentially fatal membrane overcharging and cell disintegration.
超过细胞膜电位的生理极限会损害结构完整性,使通常不能透过的溶质得以通过,并破坏细胞功能。电通透化已在细胞尺度上得到广泛研究,但尚未在单个膜损伤水平上进行研究。我们利用快速全内反射荧光(TIRF)成像技术对钙离子内流瞬变进行检测,以识别超极化细胞膜中的单个损伤,并对其聚焦性、阈值、电导和生命周期进行表征。在-100 mV的阈值下,已观察到一种无明显孔形成的弥漫性瞬时膜通透化现象。极化至-200 mV会产生低电导(50至300 pS)的聚焦孔,一旦去除超极化,这些孔会立即消失。充电至-240 mV会产生高电导(>1 nS)的孔,即使在零膜电位下也会持续数秒。随着超极化步骤的增加,持久性孔通常出现在与先前观察到的短寿命、低电导孔或弥漫性通透化不同的位置。试图将膜极化超过持久性孔形成的阈值会使其电导适应性增加,阻止进一步的电位积累,并将其“钳制”在一定限度(HEK细胞中为-270±6 mV,CHO细胞中为-284±5 mV,神经元中为-243±9 mV)。这些数据表明电穿孔损伤作为一种针对潜在致命性膜过度充电和细胞解体的保护机制,具有此前未知的作用。