Ram D, Banerjee S, Sundaresan A, Samal D, Hossain Z
Department of Physics, Indian Institute of Technology, Kanpur 208016, India.
School of Advanced Materials, and Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India.
J Phys Condens Matter. 2024 Sep 6;36(47). doi: 10.1088/1361-648X/ad6f8a.
We report a study of the magnetic and magnetotransport properties of YbAuSb single crystals, which were grown using the bismuth flux. The x-ray diffraction data indicate that YbAuSb crystallizes in LiGaGe-type hexagonal structure with space group6. Our magnetic measurements revealed that YbAuSb is nonmagnetic with a divalent state of ytterbium ion. The temperature-dependent electrical resistivity exhibits a metallic behavior. A cusp-like feature in transverse and longitudinal magnetoresistance is observed at the low field regime. This cusp-like feature is attributed to the weak antilocalization (WAL) effect, which is more prominent at low temperatures. The transverse magnetoconductivity in low field region follows semiclassical model∼B, which is consistent with the presence of WAL phenomena. The WAL effect in transverse and longitudinal magnetoconductance is well explained using the modified Hikami-Larkin-Nagaoka and generalized Altshuler-Aronov model, respectively. The Hall resistivity shows a linear field dependence with a positive slope, suggesting hole charge carriers dominate in electrical transport. The calculated carrier density and mobility are in the order of 10 cmand 10 cm V s, respectively.
我们报道了一项关于使用铋熔剂生长的YbAuSb单晶的磁性和磁输运性质的研究。X射线衍射数据表明，YbAuSb结晶为具有空间群6的LiGaGe型六方结构。我们的磁性测量表明，YbAuSb是非磁性的，镱离子处于二价态。与温度相关的电阻率表现出金属行为。在低场区域观察到横向和纵向磁电阻中的尖峰状特征。这种尖峰状特征归因于弱反局域化（WAL）效应，该效应在低温下更为显著。低场区域的横向磁导率遵循半经典模型∼B，这与WAL现象的存在一致。分别使用修正的日高-拉金-长冈模型和广义的阿尔特舒勒-阿罗诺夫模型很好地解释了横向和纵向磁导中的WAL效应。霍尔电阻率显示出与场呈线性依赖关系，斜率为正，表明空穴载流子在电输运中占主导地位。计算得到的载流子密度和迁移率分别约为10 cm和10 cm V s。
