Lima K A L, da Silva D A, Mendonça F L L, Gargano R, Ribeiro Junior L A
Computational Materials Laboratory, LCCMat, Institute of Physics, University of Brasília, Brasília, 70910-900, Brazil.
Electrical Engineering - PPEE, University of Brasília, Brasília, Brazil.
Sci Rep. 2024 Aug 14;14(1):18884. doi: 10.1038/s41598-024-69788-4.
Silicon-based two-dimensional (2D) materials have garnered significant attention due to their unique properties and potential applications in electronics, optoelectronics, and other advanced technologies. Here, we present a comprehensive investigation of a novel silicon allotrope, Popsilicene (Pop-Si), derived from the structure of Popgraphene. Using density functional theory and ab initio molecular dynamics simulations, we explore the thermal stability, mechanical and electronic properties, and optical characteristics of Pop-Si. Our results demonstrate that Pop-Si exhibits good thermal stability at 1000 K. Electronic structure calculations reveal that Pop-Si is metallic, with a high density of states at the Fermi level. Furthermore, our analysis of the optical properties indicates that Pop-Si has pronounced UV-Vis optical activity, making it a promising candidate for optoelectronic devices. Mechanical property assessments show that Pop-Si has Young's modulus ranging from 10 to 92 GPa and a Poisson's ratio of 0.95. These results combined suggest its potential for practical applications.
硅基二维材料因其独特的性质以及在电子学、光电子学和其他先进技术中的潜在应用而备受关注。在此,我们对一种源自Pop石墨烯结构的新型硅同素异形体——Pop硅烯(Pop-Si)进行了全面研究。通过密度泛函理论和从头算分子动力学模拟,我们探究了Pop-Si的热稳定性、力学和电子性质以及光学特性。我们的结果表明,Pop-Si在1000 K时表现出良好的热稳定性。电子结构计算表明,Pop-Si是金属性的,在费米能级处具有较高的态密度。此外,我们对光学性质的分析表明,Pop-Si具有显著的紫外-可见光学活性,使其成为光电器件的一个有前景的候选材料。力学性能评估表明,Pop-Si的杨氏模量在10至92 GPa之间,泊松比为0.95。这些结果综合起来表明了其在实际应用中的潜力。