Wu Yanzhao, Deng Li, Yin Xiang, Tong Junwei, Tian Fubo, Zhang Xianmin
Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China.
Department of Physics, Freie Universität Berlin, Berlin 14195, Germany.
Nano Lett. 2024 Aug 28;24(34):10534-10539. doi: 10.1021/acs.nanolett.4c02554. Epub 2024 Aug 15.
An altermagnet exhibits many novel physical phenomena because of its intrinsic antiferromagnetic coupling and natural band spin splitting, which are expected to give rise to new types of magnetic electronic components. In this study, an FeSeO monolayer is proven to be an altermagnet with out-of-plane magnetic anisotropy, and its Néel temperature is determined to be 319 K. The spin splitting of the FeSeO monolayer reaches 860 meV. Moreover, an FeSeO monolayer presents a pair of energy valleys, which can be polarized and reversed by applying uniaxial strains along different directions, resulting in a piezovalley effect. Under the strain, the net magnetization can be induced in the FeSeO monolayer by doping with holes, thereby realizing a piezomagnetic property. Interestingly, noncollinear spin current can be generated by applying an in-plane electric field on an unstrained FeSeO monolayer doped with 0.2 hole/formula unit. These excellent physical properties make the FeSeO monolayer a promising candidate for multifunctional spintronic and valleytronic devices.
交替磁体由于其固有的反铁磁耦合和自然能带自旋分裂而呈现出许多新颖的物理现象,有望产生新型磁性电子元件。在本研究中,FeSeO单层被证明是一种具有面外磁各向异性的交替磁体,其奈尔温度被确定为319K。FeSeO单层的自旋分裂达到860meV。此外,FeSeO单层呈现出一对能谷,通过沿不同方向施加单轴应变可以使其极化和反转,从而产生压谷效应。在应变作用下,通过空穴掺杂可在FeSeO单层中诱导出净磁化强度,从而实现压磁特性。有趣的是,在掺杂了0.2个空穴/化学式单元的未受应变的FeSeO单层上施加面内电场,可以产生非共线自旋电流。这些优异的物理性质使FeSeO单层成为多功能自旋电子学和谷电子学器件的有前途的候选材料。