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将垂直石墨烯集成到用于数字X射线成像的隧道阴极上。

Integration of Vertical Graphene Onto a Tunnelling Cathode for Digital X-Ray Imaging.

作者信息

Jerng Sahng-Kyoon, Hong Eunju, Lee Giwon, Lee Byungkee, Jeon Jae Ho, Kim Jinah, Chun Seung-Hyun

机构信息

Department of Physics, Sejong University, Seoul, 05006, South Korea.

Digital X-ray task, Artificial Intelligence Lab, LG Electronics, Seoul, 07796, South Korea.

出版信息

Adv Sci (Weinh). 2024 Oct;11(39):e2403721. doi: 10.1002/advs.202403721. Epub 2024 Aug 15.

DOI:10.1002/advs.202403721
PMID:39148365
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11497061/
Abstract

As an alternative to thermionic X-ray generators, cold-cathode X-ray tubes are being developed for portable and multichannel tomography. Field emission propagating from needle structures such as carbon nanotubes or Si tips currently dominates related research and development, but various obstacles prevent the widespread of this technology. An old but simple electron emission design is the planar tunnelling cathode using a metal-oxide-semiconductor (MOS) structure, which achieves narrow beam dispersion and low supplying voltage. Directly grown vertical graphene (VG) is employed as the gate electrode of MOS and tests its potential as a new emission source. The emission efficiency of the device is initially ≈1% because of unavoidable fabrication damage during the patterning processes; it drastically improves to >40% after ozone treatment. The resulting emission current obeys the Fowler-Nordheim tunnelling model, and the enhanced emission is attributed to the effective gate thickness reduction by ozone treatment. As a proof-of-concept experiment, a clustered array of 2140 cells is integrated into a system that provides mA-class emission current for X-ray generation. With pulsed digital excitations, X-ray imaging of a chest phantom, demonstrating the feasibility of using a VG MOS electron emission source as a new and innovative X-ray generator is realized.

摘要

作为热离子X射线发生器的替代方案,冷阴极X射线管正在为便携式和多通道断层扫描而研发。目前,源自诸如碳纳米管或硅尖等针状结构的场发射主导着相关研发工作,但各种障碍阻碍了该技术的广泛应用。一种古老但简单的电子发射设计是使用金属氧化物半导体(MOS)结构的平面隧道阴极,它能实现窄束发散和低供电电压。直接生长的垂直石墨烯(VG)被用作MOS的栅电极,并测试其作为新发射源的潜力。由于在图案化过程中不可避免的制造损伤,该器件的发射效率最初约为1%;经过臭氧处理后,发射效率大幅提高至>40%。产生的发射电流符合福勒-诺德海姆隧道模型,增强的发射归因于臭氧处理使有效栅极厚度减小。作为概念验证实验,将2140个单元的簇状阵列集成到一个系统中,该系统可为X射线产生提供毫安级发射电流。通过脉冲数字激励,实现了胸部体模的X射线成像,证明了使用VG MOS电子发射源作为新型创新X射线发生器的可行性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/f04944f5c749/ADVS-11-2403721-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/d88c760e5616/ADVS-11-2403721-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/ab109e536119/ADVS-11-2403721-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/7c1536b0467d/ADVS-11-2403721-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/20d282fba5ad/ADVS-11-2403721-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/e4280045bbb1/ADVS-11-2403721-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/f04944f5c749/ADVS-11-2403721-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/d88c760e5616/ADVS-11-2403721-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/ab109e536119/ADVS-11-2403721-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/7c1536b0467d/ADVS-11-2403721-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/20d282fba5ad/ADVS-11-2403721-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/e4280045bbb1/ADVS-11-2403721-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f68/11497061/f04944f5c749/ADVS-11-2403721-g004.jpg

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本文引用的文献

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High-Performance Cold Cathode X-ray Tubes Using a Carbon Nanotube Field Electron Emitter.使用碳纳米管场电子发射器的高性能冷阴极X射线管。
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