Li Yumo, Sun Hao, Yue Langchun, Yang Fengxia, Dong Xiaofei, Chen Jianbiao, Zhang Xuqiang, Chen Jiangtao, Zhao Yun, Chen Kai, Li Yan
Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea.
J Phys Chem Lett. 2024 Aug 29;15(34):8752-8758. doi: 10.1021/acs.jpclett.4c01980. Epub 2024 Aug 20.
Developing brain-inspired neuromorphic paradigms is imperative to breaking through the von Neumann bottleneck. The emulation of synaptic functionality has motivated the exploration of optoelectronic memristive devices as high-performance artificial synapses, yet the realization of such a modulatory terminal capable of full light-modulation, especially near-infrared stimuli, remains a challenge. Here, a fully light-modulated synaptic memristor is reported on a P-MoSe/PO heterostructure formed by a facile one-step selenization process. The results demonstrate successful achievement of multiwavelength (visible 470 nm to near-infrared 808 nm) modulated switching operations (reset in 0.21-0.97 V) and diverse synaptic behaviors, including postsynaptic current, paired-pulse facilitation, short- and long-term memory (STM and LTM), and learning-forgetting. Notably, the device can exhibit a 3.42 μA PSC increase under six identical 655 nm stimuli, a 11.90-46.24 μA PSC modulation by changing 808 nm light intensity from 6 to 14 mW/cm, and a transition from STM to LTM lasting between 2.47 and 4.27 s by a prolonged 808 nm pulse from 1 to 30 s. A novel possible light-induced switching mechanism in such a heterostructure is proposed. Furthermore, brain-like light-stimulated memory behavior and Pavlov's classical conditioning demonstrate the device's capacity for processing complex inputs. The study presents a design toward a multiwavelength modulated artificial visual system for color recognition.
开发受大脑启发的神经形态范式对于突破冯·诺依曼瓶颈至关重要。对突触功能的模拟激发了对光电器件忆阻器作为高性能人工突触的探索，然而，实现这样一种能够进行全光调制，特别是近红外刺激的调制终端仍然是一个挑战。在此，报道了一种通过简便的一步硒化过程在P-MoSe/PO异质结构上制备的全光调制突触忆阻器。结果表明成功实现了多波长（可见光470nm至近红外808nm）调制开关操作（在0.21 - 0.97V下复位）以及多种突触行为，包括突触后电流、双脉冲易化、短期和长期记忆（STM和LTM）以及学习-遗忘。值得注意的是，该器件在六个相同的655nm刺激下可使突触后电流增加3.42μA，通过将808nm光强度从6mW/cm²改变到14mW/cm²可实现11.90 - 46.24μA的突触后电流调制，并且通过将808nm脉冲从1s延长到30s可实现持续2.47至4.27s的从STM到LTM的转变。提出了这种异质结构中一种新型的可能的光诱导开关机制。此外，类似大脑的光刺激记忆行为和巴甫洛夫经典条件反射证明了该器件处理复杂输入的能力。该研究提出了一种用于颜色识别的多波长调制人工视觉系统的设计。
