Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
J Chem Phys. 2023 May 14;158(18). doi: 10.1063/5.0151205.
Memristive devices with both electrically and optically induced synaptic dynamic behaviors will be crucial to the accomplishment of brain-inspired neuromorphic computing systems, in which the resistive materials and device architectures are two of the most important cornerstones, but still under challenge. Herein, kuramite Cu3SnS4 is newly introduced into poly-methacrylate as the switching medium to construct memristive devices, and the expected high-performance bio-mimicry of diverse optoelectronic synaptic plasticity is demonstrated. In addition to the excellent basic performances, such as stable bipolar resistive switching with On/Off ratio of ∼486, Set/Reset voltage of ∼-0.88/+0.96 V, and good retention feature of up to 104 s, the new designs of memristors possess not only the multi-level controllable resistive-switching memory property but also the capability of mimicking optoelectronic synaptic plasticity, including electrically and visible/near-infrared light-induced excitatory postsynaptic currents, short-/long-term memory, spike-timing-dependent plasticity, long-term plasticity/depression, short-term plasticity, paired-pulse facilitation, and "learning-forgetting-learning" behavior as well. Predictably, as a new class of switching medium material, such proposed kuramite-based artificial optoelectronic synaptic device has great potential to be applied to construct neuromorphic architectures in simulating human brain functions.
具有电诱导和光诱导突触动态行为的忆阻器件对于实现类脑神经形态计算系统至关重要，其中电阻材料和器件结构是两个最重要的基石，但仍面临挑战。在此，将新型的铜锡硫矿（kuramite）Cu3SnS4 引入到聚甲基丙烯酸甲酯中作为开关介质来构建忆阻器件，并展示了预期的具有多种光电突触可塑性的高性能仿生性能。除了具有稳定的双极性电阻开关性能（约 486 的 On/Off 比、约-0.88/+0.96 V 的 Set/Reset 电压以及长达 104 s 的良好保持特性等优异的基本性能外，新型忆阻器还具有多级可控电阻开关存储特性，并且能够模拟光电突触可塑性，包括电和可见光/近红外光诱导的兴奋性突触后电流、短/长期记忆、尖峰时间依赖可塑性、长时程可塑性/压抑、短时程可塑性、成对脉冲易化以及“学习-遗忘-学习”行为等。可以预见，作为一种新型的开关介质材料，这种基于 kuramite 的人工光电突触器件具有很大的潜力，可以用于构建模拟人类大脑功能的神经形态架构。
