Bouteiller Hugo, Fontaine Bruno, Perez Olivier, Hébert Sylvie, Bourgès Cédric, Matsushita Yoshitaka, Mori Takao, Gascoin Franck, Halet Jean-François, Berthebaud David
Laboratoire CRISMAT, ENSICAEN, UNICAEN, CNRS, Normandie Univ. (UMR 6508), Caen F-14000, France.
CNRS-Saint-Gobain-NIMS, IRL 3629, Laboratory for Innovative Key Materials and Structures (LINK), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan.
Inorg Chem. 2024 Sep 9;63(36):16655-16666. doi: 10.1021/acs.inorgchem.4c01867. Epub 2024 Aug 27.
The novel quaternary compound RbBaCrSe was synthesized and characterized in both single crystal and polycrystalline forms. Crystallizing in the monoclinic crystal system (space group 2/, cell parameters = 18.7071(4) Å, = 3.6030(1) Å, = 8.9637(3) Å, β = 104.494(2)°) and isostructural to pseudo-hollandite compounds, it features mixed Rb and Ba occupancy within its one-dimensional channels. High-temperature X-ray diffraction revealed no decomposition up to 973 K, and the thermal expansion coefficient at 300 K was determined to be 2.6(1)·10 K. Spin-polarized density functional theory (DFT) calculations showed that the density of states for RbBaCrSe is more polarized than that of BaCrSe, resulting in a higher Seebeck coefficient, which was experimentally confirmed to reach a peak value of 400 μV·K at 620 K. Resistivity measurements indicated a degenerate semiconducting behavior below 550 K, with a resistivity peak of 100 mΩ·cm at that temperature, leading to a maximum power factor of 0.21 mW·m·K. Thermal conductivity measurements indicated low values around 0.8 W·m·K in the 300-900 K range, resulting in a thermoelectric figure of merit of 0.22 at 873 K. Decorrelated transport properties observed in this double-inserted pseudo-hollandite compound make RbBaCrSe a good example of beneficial synergistic effects for higher thermoelectric performance.
新型四元化合物RbBaCrSe以单晶和多晶形式合成并表征。它结晶于单斜晶体系统(空间群2/,晶胞参数 = 18.7071(4) Å, = 3.6030(1) Å, = 8.9637(3) Å,β = 104.494(2)°),与假砷钴矿化合物同构,其在一维通道内具有Rb和Ba的混合占据。高温X射线衍射表明在高达973 K时无分解,300 K时的热膨胀系数确定为2.6(1)·10 K。自旋极化密度泛函理论(DFT)计算表明,RbBaCrSe的态密度比BaCrSe更极化,导致更高的塞贝克系数,实验证实该系数在620 K时达到峰值400 μV·K。电阻率测量表明在550 K以下呈现简并半导体行为,该温度下电阻率峰值为100 mΩ·cm,最大功率因数为0.21 mW·m·K。热导率测量表明在300 - 900 K范围内低值约为0.8 W·m·K,在873 K时热电优值为0.22。在这种双插入假砷钴矿化合物中观察到的去相关输运性质使RbBaCrSe成为实现更高热电性能的有益协同效应的一个良好示例。