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从NaScGaQ(Q = S,Se)到KGaInS:用In取代Sc以实现双折射加倍。

From NaScGaQ (Q = S, Se) to KGaInS: substitution of Sc with In to achieve doubled birefringence.

作者信息

Xie Yun, Yao Wen-Dong, Du Qiu-Yang, Zhou Wenfeng, Suen Nian-Tzu, Liu Wenlong, Guo Sheng-Ping

机构信息

School of Chemistry and Chemical Engineering, Yangzhou University Yangzhou 225002 P. R. China

Yunnan Key Laboratory of Electromagnetic Materials and Devices, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University Kunming 650500 P. R. China

出版信息

Chem Sci. 2025 Aug 15. doi: 10.1039/d5sc03501e.

Abstract

The exploration of novel compounds with new crystal and electronic structures is essential for advancing the development of functional materials. Here, three novel isomorphic quaternary alkali-metal chalcogenides, AMQ (A = Na, K; M = Sc, Ga and In; Q = S, Se), with a new structure type have been obtained by a facile reactive flux assisted boron-chalcogen solid-state method, and adopt a 3 {[MQ]} open-framework architecture with A ions occupying the cavities to balance charges. Subtle modulation of the M-Q bonds induces a twofold enhancement in optical birefringence (Δ), observed from NaScGaQ (Q = S, Δ = 0.050@532 nm; Q = Se, Δ = 0.088@532 nm) to KGaInS (Δ = 0.134@532 nm). Their optical band gaps are 2.21-3.10 eV. The theoretical calculation results reveal that the replacement of Sc with In enhances the orbital hybridization between cations and anions, amplifies microscopic polarizability anisotropy and consequently doubles the birefringence. In addition, KGaInS exhibits a photocurrent density of ∼30 nA cm. This work provides novel insights for improving the birefringence performance of materials.

摘要

探索具有新晶体和电子结构的新型化合物对于推动功能材料的发展至关重要。在此,通过简便的反应助熔剂辅助硼硫属元素固态法获得了三种具有新结构类型的新型同构四元碱金属硫属化合物AMQ(A = Na、K;M = Sc、Ga和In;Q = S、Se),并采用一种3{[MQ]}开放框架结构,其中A离子占据空穴以平衡电荷。M-Q键的细微调制导致光学双折射(Δ)提高了两倍,从NaScGaQ(Q = S,Δ = 0.050@532 nm;Q = Se,Δ = 0.088@532 nm)到KGaInS(Δ = 0.134@532 nm)均可观察到。它们的光学带隙为2.21 - 3.10 eV。理论计算结果表明,用In取代Sc增强了阳离子与阴离子之间的轨道杂化,放大了微观极化率各向异性,从而使双折射加倍。此外,KGaInS表现出约30 nA cm的光电流密度。这项工作为提高材料的双折射性能提供了新的见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/be19/12459098/2be26b0e7eba/d5sc03501e-f1.jpg

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