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放电气体成分对HFE - 347mmy/O/Ar等离子体中碳化硅蚀刻的影响

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O/Ar Plasma.

作者信息

You Sanghyun, Sun Eunjae, Chae Heeyeop, Kim Chang-Koo

机构信息

Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, Worldcup-ro 206, Yeongtong-gu, Suwon 16499, Republic of Korea.

School of Chemical Engineering, Sungkyunkwan University (SKKU), Seobu-ro 2066, Jangan-gu, Suwon 16419, Republic of Korea.

出版信息

Materials (Basel). 2024 Aug 7;17(16):3917. doi: 10.3390/ma17163917.

DOI:10.3390/ma17163917
PMID:39203095
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11355763/
Abstract

This study explores the impact of varying discharge gas compositions on the etching performance of silicon carbide (SiC) in a heptafluoroisopropyl methyl ether (HFE-347mmy)/O/Ar plasma. SiC is increasingly favored for high-temperature and high-power applications due to its wide bandgap and high dielectric strength, but its chemical stability makes it challenging to etch. This research explores the use of HFE-347mmy as a low-global-warming-potential (GWP) alternative to the conventional high-GWP fluorinated gasses that are typically used in plasma etching. By examining the behavior of SiC etch rates and analyzing the formation of fluorocarbon films and Si-O bonds, this study provides insights into optimizing plasma conditions for effective SiC etching, while addressing environmental concerns associated with high-GWP gasses.

摘要

本研究探讨了在七氟异丙基甲醚（HFE-347mmy）/O/Ar等离子体中，不同的放电气体成分对碳化硅（SiC）蚀刻性能的影响。由于其宽带隙和高介电强度，SiC在高温和高功率应用中越来越受到青睐，但其化学稳定性使其蚀刻具有挑战性。本研究探索使用HFE-347mmy作为低全球变暖潜能值（GWP）的替代品，以取代通常用于等离子体蚀刻的传统高GWP氟化气体。通过研究SiC蚀刻速率的行为并分析碳氟化合物薄膜和Si-O键的形成，本研究为优化有效蚀刻SiC的等离子体条件提供了见解，同时解决了与高GWP气体相关的环境问题。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/1b3ad78994e6/materials-17-03917-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/af507338c9b2/materials-17-03917-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/e1304b288532/materials-17-03917-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/368c5711f76e/materials-17-03917-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/da25359da9f7/materials-17-03917-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/e82d0e1f6405/materials-17-03917-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/1b3ad78994e6/materials-17-03917-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/af507338c9b2/materials-17-03917-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/e1304b288532/materials-17-03917-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/368c5711f76e/materials-17-03917-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/da25359da9f7/materials-17-03917-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/e82d0e1f6405/materials-17-03917-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4972/11355763/1b3ad78994e6/materials-17-03917-g006.jpg

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本文引用的文献

1
A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide.综述：碳化硅的电感耦合等离子体反应离子刻蚀
Materials (Basel). 2021 Dec 24;15(1):123. doi: 10.3390/ma15010123.
2
Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers.4H-SiC 晶圆上等离子体蚀刻沟槽的系统表征
ACS Omega. 2021 Jul 28;6(31):20667-20675. doi: 10.1021/acsomega.1c02905. eCollection 2021 Aug 10.
3
High-temperature etching of SiC in SF/O inductively coupled plasma.在SF₆/O₂感应耦合等离子体中对碳化硅进行高温蚀刻。
Sci Rep. 2020 Nov 17;10(1):19977. doi: 10.1038/s41598-020-77083-1.
4
Recent US State and Federal Drinking Water Guidelines for Per- and Polyfluoroalkyl Substances.最近的美国州和联邦饮用水中全氟和多氟烷基物质指南。
Environ Toxicol Chem. 2021 Mar;40(3):550-563. doi: 10.1002/etc.4863. Epub 2020 Nov 2.