Wang Kang, Chai Zhaoer, Pan Yutang, Gao Chuyuan, Xu Yaxin, Ren Jiawei, Wang Jie, Zhao Fei, Qin Ming, Han Lei
Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China.
National Engineering Research Center of Communication Software and Asic Design, China Electronics Technology Group Corporation 54th Research Institute, Shijiazhuang 050081, China.
Materials (Basel). 2024 Aug 16;17(16):4068. doi: 10.3390/ma17164068.
A novel stress suppression design for flexible RF MEMS switches has been presented and demonstrated through theoretical and experimental research to isolate the stress caused by substrate bending. An RF MEMS switch with an S-shaped microspring structure was fabricated by the two-step etching process as a developmental step toward miniaturization and high reliability. The RF MEMS switches with an S-shaped microspring exhibited superior microwave performance and stable driving voltage under different substrate curvatures compared to the conventional non-microspring switches, demonstrating that the bending stress is successfully suppressed by the S-shaped microspring and the island structure. Furthermore, this innovative design could be easily extended to other flexible devices.
一种用于柔性射频微机电系统(RF MEMS)开关的新型应力抑制设计已通过理论和实验研究提出并得到验证,以隔离由衬底弯曲引起的应力。作为迈向小型化和高可靠性的发展步骤,采用两步蚀刻工艺制造了具有S形微弹簧结构的射频微机电系统开关。与传统的无微弹簧开关相比,具有S形微弹簧的射频微机电系统开关在不同衬底曲率下表现出优异的微波性能和稳定的驱动电压,表明S形微弹簧和岛状结构成功抑制了弯曲应力。此外,这种创新设计可以很容易地扩展到其他柔性器件。