Li Chenghang, Fang Zikeng, Yan Ying, Li Henan, Luo Xiang, Wang Xuyue, Zhou Ping
State Key Laboratory of High-Performance Precision Manufacturing, Department of Mechanical Engineering, Dalian University of Technology, Dalian 116024, China.
Micromachines (Basel). 2024 Aug 15;15(8):1035. doi: 10.3390/mi15081035.
Effectively utilizing deep red to near-infrared (DR-NIR) phosphors to achieve the optimal performance of NIR phosphor-converted white LEDs (DR-NIR pc-wLEDs) is currently a research hotspot. In this study, an optical model of DR-NIR pc-wLEDs with virtual multilayer fluorescent films was established based on the Monte Carlo ray-tracing method. Different gradient distributions of the particles were assigned within the fluorescent film to explore their impact on the optical performance of pc-LEDs. The results show that, for the case with single-type particles, distributing more DR-NIR particles far from the blue LED chip increased the overall radiant power. The distribution of more DR-NIR particles near the chip increased the conversion ratio from blue to DR-NIR light. The ratio of the 707 nm fluorescence emission intensity to the 450 nm excitation light intensity increased from 1:0.51 to 1:0.28. For multiple-type particles, changes in the gradient distribution resulted in dual-nature changes, leading to a deterioration in the color rendering index and an increase in the correlated color temperature, while also improving the DR-NIR band ratio. The reabsorption caused by the partial overlap between the excitation band of the DR-NIR particles and the emission band of the other particles enhanced the radiant power at 707 nm. Distributing DR-NIR phosphor particles closer to the chip effectively amplified this effect. The proposed model and its results provide a solution for the forward design of particle distributions in fluorescent films to improve the luminous performance of DR-NIR pc-wLEDs.
有效利用深红色至近红外(DR-NIR)荧光粉以实现近红外荧光粉转换白光发光二极管(DR-NIR pc-wLEDs)的最佳性能是当前的一个研究热点。在本研究中,基于蒙特卡罗光线追踪方法建立了具有虚拟多层荧光膜的DR-NIR pc-wLEDs光学模型。在荧光膜内赋予颗粒不同的梯度分布,以探究它们对pc-LEDs光学性能的影响。结果表明,对于单一类型颗粒的情况,将更多的DR-NIR颗粒分布在远离蓝色LED芯片的位置会增加整体辐射功率。更多的DR-NIR颗粒分布在芯片附近会提高从蓝光到DR-NIR光的转换率。707 nm荧光发射强度与450 nm激发光强度的比值从1:0.51增加到了1:0.28。对于多种类型颗粒,梯度分布的变化导致了双重性质的变化,导致显色指数恶化和相关色温升高,同时也提高了DR-NIR波段比率。DR-NIR颗粒的激发带与其他颗粒的发射带部分重叠所引起的再吸收增强了707 nm处的辐射功率。将DR-NIR荧光粉颗粒分布得更靠近芯片有效地放大了这种效果。所提出的模型及其结果为荧光膜中颗粒分布的正向设计提供了一种解决方案,以提高DR-NIR pc-wLEDs的发光性能。