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用于基于垂直雪崩光电二极管（VAPD）的CMOS图像传感器的稳健像素设计方法

Robust Pixel Design Methodologies for a Vertical Avalanche Photodiode (VAPD)-Based CMOS Image Sensor.

作者信息

Inoue Akito, Torazawa Naoki, Yamada Shota, Sugiura Yuki, Ishii Motonori, Sakata Yusuke, Kunikyo Taiki, Tamaru Masaki, Kasuga Shigetaka, Yuasa Yusuke, Kitajima Hiromu, Koshida Hiroshi, Kabe Tatsuya, Usuda Manabu, Takemoto Masato, Nose Yugo, Okino Toru, Shirono Takashi, Nakanishi Kentaro, Hirose Yutaka, Koyama Shinzo, Mori Mitsuyoshi, Sawada Masayuki, Odagawa Akihiro, Tanaka Tsuyoshi

机构信息

Panasonic Industry Co., Ltd., 1006, Oaza Kadoma, Kadoma-shi 571-8506, Osaka, Japan.

出版信息

Sensors (Basel). 2024 Aug 21;24(16):5414. doi: 10.3390/s24165414.

DOI:10.3390/s24165414
PMID:39205107
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11359834/
Abstract

We present robust pixel design methodologies for a vertical avalanche photodiode-based CMOS image sensor, taking account of three critical practical factors: (i) "guard-ring-free" pixel isolation layout, (ii) device characteristics "insensitive" to applied voltage and temperature, and (iii) stable operation subject to intense light exposure. The "guard-ring-free" pixel design is established by resolving the tradeoff relationship between electric field concentration and pixel isolation. The effectiveness of the optimization strategy is validated both by simulation and experiment. To realize insensitivity to voltage and temperature variations, a global feedback resistor is shown to effectively suppress variations in device characteristics such as photon detection efficiency and dark count rate. An in-pixel overflow transistor is also introduced to enhance the resistance to strong illumination. The robustness of the fabricated VAPD-CIS is verified by characterization of 122 different chips and through a high-temperature and intense-light-illumination operation test with 5 chips, conducted at 125 °C for 1000 h subject to 940 nm light exposure equivalent to 10 kLux.

摘要

我们提出了基于垂直雪崩光电二极管的CMOS图像传感器的稳健像素设计方法，考虑了三个关键的实际因素：（i）“无保护环”像素隔离布局，（ii）器件特性对施加电压和温度“不敏感”，以及（iii）在强光照射下稳定运行。“无保护环”像素设计是通过解决电场集中与像素隔离之间的权衡关系而建立的。通过仿真和实验验证了优化策略的有效性。为了实现对电压和温度变化的不敏感性，全局反馈电阻被证明可以有效抑制诸如光子探测效率和暗计数率等器件特性的变化。还引入了像素内溢出晶体管以增强对强光的抗性。通过对122个不同芯片的表征以及对5个芯片进行的高温和强光照射操作测试（在125°C下进行1000小时，受相当于10 klux的940 nm光照），验证了所制造的VAPD-CIS的稳健性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d85b/11359834/57a0da480fba/sensors-24-05414-g016.jpg
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本文引用的文献

1
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2
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Sensors (Basel). 2020 May 25;20(10):3007. doi: 10.3390/s20103007.
3
High fill-factor miniaturized SPAD arrays with a guard-ring-sharing technique.采用保护环共享技术的高填充因子小型化单光子雪崩二极管阵列
Opt Express. 2020 Apr 27;28(9):13068-13080. doi: 10.1364/OE.389216.
4
Twenty Years of Rad-Hard K14 SPAD in Space Projects.太空项目中抗辐射K14单光子雪崩二极管的二十年发展历程
Sensors (Basel). 2015 Jul 24;15(8):18178-96. doi: 10.3390/s150818178.
5
Single-photon imaging in complementary metal oxide semiconductor processes.互补金属氧化物半导体工艺中的单光子成像。
Philos Trans A Math Phys Eng Sci. 2014 Feb 24;372(2012):20130100. doi: 10.1098/rsta.2013.0100. Print 2014 Mar 28.