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沉积在氮掺杂非晶碳膜基板上的耐腐蚀超薄铜膜及其在可折叠电路板中的应用。

Corrosion-Resistant Ultrathin Cu Film Deposited on N-Doped Amorphous Carbon Film Substrate and Its Use for Crumpleable Circuit Board.

作者信息

Shim Chae-Eun, Lee Sangseob, Kong Minsik, Kim Ik-Soo, Kwak Jaeik, Jang Woosun, Jeong Se-Young, Kim Dong Wook, Soon Aloysius, Jeong Unyong

机构信息

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.

Department of Materials Science and Engineering and Center for Artificial Synesthesia Materials, Yonsei University, Seoul, 03722, Republic of Korea.

出版信息

Adv Sci (Weinh). 2024 Oct;11(40):e2403587. doi: 10.1002/advs.202403587. Epub 2024 Aug 29.

Abstract

Copper (Cu) is widely used as an industrial electrode due to its high electrical conductivity, mechanical properties, and cost-effectiveness. However, Cu is susceptible to corrosion, which degrades device performance over time. Although various methods (alloying, physical passivation, surface treatment, etc.) are introduced to address the corrosion issue, they can cause decreased conductivity or vertical insulation. Here, using the nitrogen-doped amorphous carbon (a-C:N) thin film is proposed as a substrate on which Cu is directly deposited. This simple method significantly inhibits corrosion of ultrathin Cu (<20 nm) films in humid conditions, enabling the fabrication of ultrathin electronic circuit boards without corrosion under ambient conditions. This study investigates the origin of corrosion resistance through comprehensive microscopic/spectroscopic characterizations and density-functional theory (DFT) calculations: i) diffusion of Cu atoms into the a-C:N driven by stable C-Cu-N bond formation, ii) diffusion of N atoms from the a-C:N to the Cu layer heading the top surface, which is the thermodynamically preferred location for N, and iii) the doped N atoms in Cu layer suppress the inclusion of O into the Cu lattice. By leveraging the ultrathinness and deformability of the circuit board, a transparent electrode and a crumpleable LED lighting device are demonstrated.

摘要

铜(Cu)因其高导电性、机械性能和成本效益而被广泛用作工业电极。然而,铜易受腐蚀,随着时间的推移会降低器件性能。尽管已引入各种方法(合金化、物理钝化、表面处理等)来解决腐蚀问题,但它们会导致导电性下降或垂直绝缘。在此,提出使用氮掺杂非晶碳(a-C:N)薄膜作为直接沉积铜的衬底。这种简单的方法能显著抑制超薄铜(<20 nm)膜在潮湿条件下的腐蚀,从而能够在环境条件下制造无腐蚀的超薄电子电路板。本研究通过全面的微观/光谱表征和密度泛函理论(DFT)计算来探究耐腐蚀的根源:i)铜原子通过形成稳定的C-Cu-N键扩散到a-C:N中;ii)氮原子从a-C:N扩散到铜层并朝向顶面,这是氮在热力学上更倾向的位置;iii)铜层中的掺杂氮原子抑制氧进入铜晶格。通过利用电路板的超薄性和可变形性,展示了一种透明电极和一种可折叠的LED照明装置。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2706/11516104/b76224c41465/ADVS-11-2403587-g005.jpg

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