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使用冷大气等离子体辅助SiO涂层增强印刷电路板电子元件的腐蚀防护

Enhanced Corrosion Protection of Printed Circuit Board Electronics using Cold Atmospheric Plasma-Assisted SiO Coatings.

作者信息

Kasi Venkat, Tien Jia-Huei, Rahman Md Mahabubur, Rana Muhammad Masud, Heredia Rivera Ulisses Alberto, Shang Zhongxia, Vidhyadhiraja Advika, Zhang Jingxuan, Youngblood Jeffrey P, Bahr David F, Rahimi Rahim

机构信息

School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.

Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States.

出版信息

ACS Appl Mater Interfaces. 2024 Sep 11;16(36):48293-48306. doi: 10.1021/acsami.4c09751. Epub 2024 Sep 2.

Abstract

The miniaturization and widespread deployment of electronic devices across diverse environments have heightened their vulnerability to corrosion, particularly affecting copper traces within printed circuit boards (PCBs). Conventional protective methods, such as conformal coatings, face challenges including the necessity for a critical thickness to ensure effective barrier properties and the requirement for multiple steps of drying and curing to eliminate solvent entrapment within polymer coatings. This study investigates cold atmospheric plasma (CAP) as an innovative technique for directly depositing ultrathin silicon oxide (SiO) coatings onto copper surfaces to enhance corrosion protection in PCBs. A systematic investigation was undertaken to examine how the scanning speed of the CAP deposition head impacts the film quality and corrosion resistance. The research aims to determine the optimal scanning speed of the CAP deposition head that achieves complete surface coverage while promoting effective cross-linking and minimizing unreacted precursor entrapment, resulting in superior electrical barrier and mechanical properties. The CAP coating process demonstrated the capability of depositing SiO onto copper surfaces at various thicknesses ranging from 70 to 1110 nm through a single deposition process by simply adjusting the scanning speed of the plasma head (5-75 mm/s). Evaluation of material corrosion barrier characteristics revealed that scanning speeds of 45 mm/s of the plasma deposition head provided an effective coating thickness of 140 nm, exhibiting superior corrosion resistance (30-fold) compared to that of uncoated copper. As a proof of concept, the efficacy of CAP-deposited SiO coatings was demonstrated by protecting an LED circuit in saltwater and by coating printed circuits for potential agricultural sensor applications. These CAP-deposited coatings offer performance comparable to or superior to traditional conformal polymeric coatings. This research presents CAP-deposited SiO coatings as a promising approach for effective and scalable corrosion protection in miniaturized electronics.

摘要

电子设备在各种环境中的小型化和广泛应用增加了它们对腐蚀的脆弱性,尤其影响印刷电路板(PCB)中的铜线路。传统的保护方法,如保形涂层,面临诸多挑战,包括需要临界厚度以确保有效的阻隔性能,以及需要多步干燥和固化以消除聚合物涂层内的溶剂截留。本研究调查了冷大气等离子体(CAP)作为一种创新技术,用于直接在铜表面沉积超薄氧化硅(SiO)涂层,以增强PCB中的防腐蚀性能。进行了系统研究,以考察CAP沉积头的扫描速度如何影响薄膜质量和耐腐蚀性。该研究旨在确定CAP沉积头的最佳扫描速度,该速度能实现完全的表面覆盖,同时促进有效的交联,并将未反应的前驱体截留降至最低,从而产生优异的电阻隔和机械性能。通过简单调整等离子体头的扫描速度(5 - 75毫米/秒),CAP涂层工艺能够通过单次沉积过程在铜表面沉积厚度从70到1110纳米不等的SiO。对材料腐蚀阻隔特性的评估表明,等离子体沉积头扫描速度为45毫米/秒时可提供140纳米的有效涂层厚度,与未涂层的铜相比,其耐腐蚀性表现优异(高出30倍)。作为概念验证,通过在盐水中保护LED电路以及为潜在的农业传感器应用涂覆印刷电路,证明了CAP沉积的SiO涂层的有效性。这些CAP沉积的涂层性能与传统的保形聚合物涂层相当或更优。本研究表明,CAP沉积的SiO涂层是一种在小型化电子设备中实现有效且可扩展的防腐蚀保护的有前景的方法。

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