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基于双光子聚合的微纳滤光片的直接激光写入

Direct Laser Writing of Micro-Nano Filters Based on Three-Photon Polymerization.

作者信息

Jue Jiubin, Gan Zongsong

机构信息

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China.

Key Laboratory of Education Ministry for Information Storage Systems, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China.

出版信息

ACS Appl Mater Interfaces. 2024 Sep 11;16(36):48406-48411. doi: 10.1021/acsami.4c13129. Epub 2024 Aug 29.

DOI:10.1021/acsami.4c13129
PMID:39208328
Abstract

Direct laser writing (DLW) enables the manufacturing of functional quantum dot (QD)-polymer nanostructures with the special performance desired for technological applications. However, most papers fabricate the QD-polymer photoresist based on the principle of two-photon polymerization using laser wavelengths of 750-800 nm, which cannot effectively fabricate the near-infrared QD-polymer photoresist with absorption wavelengths above 800 nm due to linear absorption. Moreover, most papers report a relatively low doping concentration of QDs. To address these issues, this study introduces three-photon DLW technology using a near-infrared 1035 nm laser to effectively avoid the linear absorption of the near-infrared PbS/CdS QD-polymer photoresist. Three kinds of QD-polymer photoresists with concentrations up to 150 mg mL are prepared through surface modification of QDs. We demonstrate that three-photon DLW is feasible to fabricate high-concentration QD-polymer photoresist to produce micro/nano high-performance QD-polymer filters of visible and near-infrared light absorption. This study provides materials and process guidance for the fabrication and application of visible and near-infrared optical filters through three-photon DLW processing of various kinds of functional nanoparticles-polymer photoresist.

摘要

直接激光写入(DLW)能够制造出具有技术应用所需特殊性能的功能性量子点(QD)-聚合物纳米结构。然而,大多数论文基于双光子聚合原理,使用750-800nm的激光波长来制造QD-聚合物光致抗蚀剂,由于线性吸收,这种方法无法有效地制造出吸收波长在800nm以上的近红外QD-聚合物光致抗蚀剂。此外,大多数论文报道的量子点掺杂浓度相对较低。为了解决这些问题,本研究引入了使用近红外1035nm激光的三光子DLW技术,以有效避免近红外PbS/CdS QD-聚合物光致抗蚀剂的线性吸收。通过对量子点进行表面改性,制备了三种浓度高达150mg/mL的QD-聚合物光致抗蚀剂。我们证明,三光子DLW对于制造高浓度QD-聚合物光致抗蚀剂以生产可见和近红外光吸收的微/纳米高性能QD-聚合物滤光片是可行的。本研究通过对各种功能性纳米粒子-聚合物光致抗蚀剂进行三光子DLW加工,为可见和近红外光学滤光片的制造和应用提供了材料和工艺指导。

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