Sarmah Himangshu Sekhar, Ghosh Subhradip
Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039, Assam, India.
Nanoscale. 2024 Sep 26;16(37):17474-17487. doi: 10.1039/d4nr02246g.
We have performed density functional theory (DFT) based calculations to investigate the effects of stacking patterns on the electronic and magnetic properties of several nitride MXenes. MXenes, a relatively new addition to the family of two-dimensional materials, have exhibited fascinating properties in several occasions, primarily due to their compositional flexibility. However, compared to carbide MXenes, nitride MXenes are much less explored. Moreover, the structural aspects of MXenes and the tunability they may offer have not been explored until recently. In this work, we have combined these two less-explored aspects to examine the structure-property relationships in the field of magnetism. We find that in the family of MNT (M = Sc, Ti, V, Cr, Mn; T = O, F) MXenes, the stacking of transition metal planes has a substantial effect on the ground state and finite temperature magnetic properties. We also find that the electronic ground states can be tuned by changing the stacking pattern in these compounds, making the materials appropriate for applications as magnetic devices. Through a detailed analysis, we have connected the unconventional stacking pattern-driven tunability of these compounds with regard to electronic and magnetic properties to the local symmetry, inhomogeneity (or lack of it) of structural parameters, and electronic structures.
我们进行了基于密度泛函理论(DFT)的计算,以研究堆叠模式对几种氮化物MXenes的电子和磁性的影响。MXenes是二维材料家族中相对较新的成员,在多个场合都展现出了迷人的特性,这主要归功于它们的成分灵活性。然而,与碳化物MXenes相比,氮化物MXenes的研究要少得多。此外,直到最近,MXenes的结构方面及其可能提供的可调性才得到探索。在这项工作中,我们将这两个较少被探索的方面结合起来,以研究磁性领域中的结构-性能关系。我们发现,在MNT(M = Sc、Ti、V、Cr、Mn;T = O、F)MXenes家族中,过渡金属平面的堆叠对基态和有限温度下的磁性有重大影响。我们还发现,通过改变这些化合物中的堆叠模式,可以调节电子基态,使这些材料适合用作磁性器件。通过详细分析,我们将这些化合物在电子和磁性方面由非常规堆叠模式驱动的可调性与局部对称性、结构参数的不均匀性(或缺乏不均匀性)以及电子结构联系了起来。