Fan Yibo, Wang Qian, Wang Wei, Wang Dong, Huang Qikun, Wang Zhenxing, Han Xiang, Chen Yanxue, Bai Lihui, Yan Shishen, Tian Yufeng
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
Spintronics Institute, University of Jinan, Jinan 250022, China.
ACS Nano. 2024 Sep 16. doi: 10.1021/acsnano.4c09004.
Perpendicular magnetization switching by a magnetic-field-free, energy-efficient electrical approach has remained a great challenge. Here, we demonstrate the realization of robust magnetic-field-free perpendicular magnetization switching in the (101)RuO/[Pt/Co/Pt] heterojunction by manipulating the spin polarization direction. We proposed that the relative strength of out-of-plane spin currents with out-of-plane spin polarization and in-plane spin polarization can be effectively manipulated by tuning the nominal thickness of [Pt/Co/Pt] multilayers and the direction of applied electric current with respect to the RuO crystal orientation. When the electric current is applied along RuO [010] direction and the net spin current with spin polarization is canceled out, the "robust" perpendicular magnetization switching driven by pure is achieved in (101)RuO/[Pt/Co/Pt], where the term "robust" means that the switching polarity (counterclockwise) does not change and the switching ratio reduces very slowly with increasing magnitude of in-plane magnetic field and/or in a wide range of ±500 Oe. Our findings provide a technique to effectively manipulate the spin currents, which is beneficial for the investigation of antiferromagnetic spintronic devices with high magnetic field stability and reliable magnetization switching.
通过无磁场、节能的电学方法实现垂直磁化翻转一直是一项巨大挑战。在此，我们展示了通过操控自旋极化方向，在(101)RuO/[Pt/Co/Pt]异质结中实现稳健的无磁场垂直磁化翻转。我们提出，通过调整[Pt/Co/Pt]多层膜的标称厚度以及施加电流相对于RuO晶体取向的方向，可以有效操控具有面外自旋极化和面内自旋极化的面外自旋电流的相对强度。当电流沿RuO [010]方向施加且具有自旋极化的净自旋电流被抵消时，在(101)RuO/[Pt/Co/Pt]中实现了由纯面外自旋电流驱动的“稳健”垂直磁化翻转，其中“稳健”一词意味着翻转极性（逆时针）不变，并且在±500 Oe的宽范围内，随着面内磁场强度和/或的增加，翻转比下降非常缓慢。我们的研究结果提供了一种有效操控自旋电流的技术，这有利于研究具有高磁场稳定性和可靠磁化翻转的反铁磁自旋电子器件。
