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关注声明：用于神经形态计算的（钴，镱）共掺杂氧化锌忆阻器的增强电学和磁学特性

Expression of concern: Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing.

作者信息

Elboughdiri Noureddine, Iqbal Shahid, Abdullaev Sherzod, Aljohani Mohammed, Safeen Akif, Althubeiti Khaled, Khan Rajwali

机构信息

Chemical Engineering Department, College of Engineering, University of Ha'il P.O. Box 2440 Ha'il 81441 Saudi Arabia.

Chemical Engineering Process Department, National School of Engineers Gabes, University of Gabes Gabes 6029 Tunisia.

出版信息

RSC Adv. 2024 Sep 4;14(39):28299. doi: 10.1039/d4ra90092h.

DOI:10.1039/d4ra90092h
PMID:39239293
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11372562/
Abstract

Expression of concern for 'Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing' by Noureddine Elboughdiri , , 2023, , 35993-36008, https://doi.org/10.1039/D3RA06853F.

摘要

对Noureddine Elboughdiri所著的《用于神经形态计算的（钴，镱）共掺杂氧化锌忆阻器的增强电学和磁学特性》的关注声明，2023年，第35993 - 36008页，https://doi.org/10.1039/D3RA06853F

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