更正：用于神经形态计算的高性能一维卤化物钙钛矿交叉阵列忆阻器和突触

Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing.

作者信息

Vishwanath Sujaya Kumar, Febriansyah Benny, Ng Si En, Das Tisita, Acharya Jyotibdha, John Rohit Abraham, Sharma Divyam, Dananjaya Putu Andhita, Jagadeeswararao Metikoti, Tiwari Naveen, Kulkarni Mohit Ramesh Chandra, Lew Wen Siang, Chakraborty Sudip, Basu Arindam, Mathews Nripan

机构信息

School of Materials Science & Engineering, Nanyang Technological University, 639798, Singapore.

Energy Research Institute@NTU (ERI@N), Nanyang Technological University, 637553, Singapore.

出版信息

Mater Horiz. 2024 Sep 16;11(18):4519. doi: 10.1039/d4mh90073a.

DOI:10.1039/d4mh90073a

PMID:39206597

Abstract

Correction for 'High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing' by Sujaya Kumar Vishwanath , , 2024, , 2643-2656, https://doi.org/10.1039/D3MH02055J.

摘要

苏贾亚·库马尔·维什瓦纳特所著《用于神经形态计算的高性能一维卤化物钙钛矿交叉开关忆阻器和突触》的更正，2024年，第2643 - 2656页，https://doi.org/10.1039/D3MH02055J