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载流子-载流子排斥限制了N掺杂有机半导体的电导率。

Carrier-Carrier Repulsion Limits the Conductivity of N-Doped Organic Semiconductors.

作者信息

Yang Xuwen, Ye Gang, Liu Jian, Chiechi Ryan C, Koster L Jan Anton

机构信息

Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, Groningen, 9747 AG, The Netherlands.

Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Youyi Road 368, Wuhan, 430062, P. R. China.

出版信息

Adv Mater. 2024 Nov;36(44):e2404397. doi: 10.1002/adma.202404397. Epub 2024 Sep 9.

DOI:10.1002/adma.202404397
PMID:39246234
Abstract

Molecular doping is a key strategy to enhance the electrical conductivity of organic semiconductors. Typically, the electrical conductivity shows a maximum value upon increased doping, after which the conductivity decreases. This decrease in conductivity is commonly attributed to unfavorable changes in the morphology. However, in recent simulation work, has shown, that the conductivity-at high doping-is instead limited by electron-electron repulsion rather than by morphology, at least for some material combinations. Based on the simulations, this limitation is expected to show up in the dependence of the Seebeck coefficient versus carrier density: the Seebeck coefficient will follow Heike's formula if carrier-carrier repulsion limits the conductivity. Here, the electrical conductivity and Seebeck coefficient are measured as a function of doping for a series of n-type organic semiconductors. Additionally, the resulting carrier density is measured using metal-insulator-semiconductor diodes, which link dopant loading and the number of charge carriers. At high carrier densities, the Seebeck coefficient indeed follows Heike's formula, confirming that the conductivity is limited by carrier-carrier repulsion rather than by morphological effects. This study shows that current models of hopping transport in organic semiconductors may be incomplete. As a result, this study offers novel insights in the design of organic semiconductors.

摘要

分子掺杂是提高有机半导体电导率的关键策略。通常,随着掺杂量增加,电导率会出现最大值,之后电导率会下降。电导率的这种下降通常归因于形态的不利变化。然而,最近的模拟工作表明,至少对于某些材料组合而言,高掺杂时的电导率受电子 - 电子排斥限制,而非形态限制。基于这些模拟,预计这种限制会体现在塞贝克系数与载流子密度的关系中:如果载流子 - 载流子排斥限制电导率,塞贝克系数将遵循海克公式。在此,对一系列n型有机半导体测量了电导率和塞贝克系数随掺杂的变化。此外,使用金属 - 绝缘体 - 半导体二极管测量所得的载流子密度,该二极管将掺杂剂负载与电荷载流子数量联系起来。在高载流子密度下,塞贝克系数确实遵循海克公式,证实电导率受载流子 - 载流子排斥限制,而非形态效应限制。这项研究表明,当前有机半导体中的跳跃传输模型可能并不完整。因此,这项研究为有机半导体的设计提供了新的见解。

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