Guo Jing, Chen Ping-An, Yang Shuzhang, Wei Huan, Liu Yu, Xia Jiangnan, Chen Chen, Chen Huajie, Wang Suhao, Li Wenwu, Hu Yuanyuan
Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
School of Physics and Information Engineering, Shanxi Normal University, Taiyuan, 031000, China.
Small Methods. 2025 Jan;9(1):e2400084. doi: 10.1002/smtd.202400084. Epub 2024 May 13.
Doping plays a crucial role in modulating and enhancing the performance of organic semiconductor (OSC) devices. In this study, the critical role of dopants is underscored in shaping the morphology and structure of OSC films, which in turn profoundly influences their properties. Two dopants, trityl tetrakis(pentafluorophenyl) (TrTPFB) and N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate (DMA-TPFB), are examined for their doping effects on poly(3-hexylthiophene) (P3HT) and PBBT-2T host OSCs. It is found that although TrTPFB exhibits higher doping efficiency, OSCs doped with DMA-TPFB achieve comparable or even enhanced electrical conductivity. Indeed, the electrical conductivity of DMA-TPFB-doped P3HT reaches over 67 S cm, which is a record-high value for mixed-solution-doped P3HT. This can be attributed to DMA-TPFB inducing a higher degree of crystallinity and reduced structural disorder. Moreover, the beneficial impact of DMA-TPFB on the OSC films' morphology and structure results in superior thermoelectric performance in the doped OSCs. These findings highlight the significance of dopant-induced morphological and structural considerations in enhancing the film characteristics of OSCs, opening up a new avenue for optimization of dopant performance.
掺杂在调节和提高有机半导体(OSC)器件的性能方面起着至关重要的作用。在本研究中,强调了掺杂剂在塑造OSC薄膜的形态和结构方面的关键作用,这反过来又深刻影响其性能。研究了两种掺杂剂,三苯基四(五氟苯基)(TrTPFB)和N,N-二甲基苯胺四(五氟苯基)硼酸盐(DMA-TPFB)对聚(3-己基噻吩)(P3HT)和PBBT-2T主体OSC的掺杂效果。研究发现,虽然TrTPFB表现出更高的掺杂效率,但用DMA-TPFB掺杂的OSC具有相当甚至更高的电导率。事实上,DMA-TPFB掺杂的P3HT的电导率超过67 S/cm,这是混合溶液掺杂P3HT的创纪录高值。这可归因于DMA-TPFB诱导了更高的结晶度并减少了结构无序。此外,DMA-TPFB对OSC薄膜形态和结构的有益影响导致掺杂OSC具有优异的热电性能。这些发现突出了掺杂剂诱导的形态和结构因素在增强OSC薄膜特性方面的重要性,为优化掺杂剂性能开辟了一条新途径。