Defect Structure, Oxygen Ion Conduction, and Conducting Mechanism in Ruddlesden-Popper SrZrMO (M = Ga, Y, In).

Ruddlesden-Popper (RP)-structured materials based on transition metals with a variable valence, such as Fe, Mn, Ni, and so on, have been well documented for their potential of being used as electrodes in solid-oxide fuel cells. However, RP materials with pure or dominant ionic conduction are rare. Here, a series of Zr-based RP materials SrZrMO (M = Ga, Y, In) with electrical conductivity as high as 3.25 × 10 S cm at 900 °C in air was reported, which represents the highest conductivity for the Zr-based RP materials and is comparable to that of the recently reported In-based RP oxide-ion conductors, such as NdBaInO-based and LaBaInO-based materials. Under low oxygen partial pressure (O), the doped samples show pure ionic conducting behaviors without n-type electronic conductivity. The defect formation energies, local structure around the oxygen vacancies, and oxide-ion-conducting mechanism of the acceptor-doped SrZrO-based materials were studied for the first time. The results revealed a two-dimensional oxide ion migration characteristic within the perovskite slabs. This work therefore provides a good reference for developing new oxide-ion conductors in the Zr-based RP-structured materials.