Miao Li, Zhang Ruisheng, Lu Xinyu, Wu Lianbin, Wen Zaoxia, Qiu Huayu, Wu Guang-Peng
Key Laboratory of Organosilicon Chemistry and Material Technology, Ministry of Education, College of Material Chemistry and Chemical Engineering, Hangzhou Normal University, Hangzhou, Zhejiang 311121 ,China.
Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310058, China.
ACS Appl Mater Interfaces. 2024 Sep 25;16(38):51554-51564. doi: 10.1021/acsami.4c11916. Epub 2024 Sep 12.
Hydrogenated silsesquioxane (HSQ) is a key inorganic electron beam resist, celebrated for its sub-10 nm resolution and etching resistance, but it faces challenges with stability and sensitivity. Our innovative study has comprehensively assessed the lithographic performance of three functionalized polysilsesquioxane (PSQ) resist series─olefins, halogenated alkanes, and alkanes─under electron beam lithography (EBL). We discovered that the addition of olefin groups, such as in the HMP-30 formulation with 30% propyl acrylate, remarkably increased the sensitivity to 0.6 μC/cm. The inclusion of halogenated aromatic and hydrogen-substituted methyl groups further enhanced sensitivity and contrast, with HClBN-50 achieving a 22.9 nm resolution pattern. At the same time, the storage of PSQ resists was significantly improved compared to commercial HSQ with increasing alkane group content. Crucially, our research has unveiled the lithography reaction mechanism, highlighting how group encapsulation and steric hindrance influence PSQ performance. This insight is groundbreaking, offering a deeper understanding of the molecular structure-performance relationship and laying the groundwork for developing next-generation electron beam resists with superior sensitivity, resolution, and contrast for microelectronics manufacturing.
氢化倍半硅氧烷（HSQ）是一种关键的无机电子束抗蚀剂，以其低于10纳米的分辨率和抗蚀刻性而闻名，但它在稳定性和灵敏度方面面临挑战。我们的创新性研究全面评估了三种功能化聚倍半硅氧烷（PSQ）抗蚀剂系列——烯烃类、卤代烷烃类和烷烃类——在电子束光刻（EBL）下的光刻性能。我们发现，添加烯烃基团，如在含有30%丙烯酸丙酯的HMP - 30配方中，可显著提高灵敏度至0.6 μC/cm。包含卤代芳基和氢取代甲基进一步提高了灵敏度和对比度，HClBN - 50实现了22.9纳米的分辨率图案。同时，随着烷烃基团含量的增加，PSQ抗蚀剂的储存稳定性相比商业HSQ有显著改善。至关重要的是，我们的研究揭示了光刻反应机制，突出了基团封装和空间位阻如何影响PSQ性能。这一见解具有开创性，为深入理解分子结构 - 性能关系奠定了基础，并为开发用于微电子制造的具有卓越灵敏度、分辨率和对比度的下一代电子束抗蚀剂奠定了基础。
