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基于芘衍生物的新型抗蚀刻分子玻璃光刻胶用于电子束光刻

Novel Etch-Resistant Molecular Glass Photoresist Based on Pyrene Derivatives for Electron Beam Lithography.

作者信息

Cong Xue, Zhang Siliang, Gao Jiaxing, Cui Xuewen, Wu Yurui, Guo Xudong, Hu Rui, Wang Shuangqing, Chen Jinping, Li Yi, Yang Guoqiang

机构信息

Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.

Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.

出版信息

ACS Omega. 2024 Aug 27;9(36):37585-37595. doi: 10.1021/acsomega.4c01044. eCollection 2024 Sep 10.

DOI:10.1021/acsomega.4c01044
PMID:39281958
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11391444/
Abstract

Novel -butyloxycarbonyl-protected molecular glass photoresists with pyrene as the core (Pyr-8Boc and Pyr-4Boc) were designed and synthesized. The thermal stability and film-forming ability were measured to assess their applicability for lithography. Pyr-Boc (Pyr-8Boc and Pyr-4Boc) photoresists were evaluated by high-resolution electron beam lithography (EBL), acting as chemically amplified resists. Pyr-4Boc showed a better lithography performance, achieving 25 nm line/space patterns at the dose of 50 μC/cm. Under SF/O plasma, the etch selectivity of the Pyr-4Boc photoresist to silicon was 12.3, which is twice that of the commercially available poly(methyl methacrylate) photoresist (950 k). The lithography mechanism of EBL was further investigated. Theoretical calculations of HOMO/LUMO orbital energies, cyclic voltammetry, and fluorescence quenching experiments were conducted to confirm the electron-transfer reactions between the Pyr-Boc and photoacid generator. The study provides an option of high sensitivity and etch-resistant photoresist for EBL.

摘要

设计并合成了以芘为核心的新型丁氧羰基保护的分子玻璃光刻胶（Pyr - 8Boc和Pyr - 4Boc）。测量了它们的热稳定性和成膜能力，以评估其在光刻中的适用性。通过高分辨率电子束光刻（EBL）对Pyr - Boc（Pyr - 8Boc和Pyr - 4Boc）光刻胶进行评估，其作为化学增幅光刻胶。Pyr - 4Boc表现出更好的光刻性能，在50 μC/cm的剂量下实现了25 nm的线/间距图案。在SF/O等离子体下，Pyr - 4Boc光刻胶对硅的蚀刻选择性为12.3，是市售聚甲基丙烯酸甲酯光刻胶（950 k）的两倍。进一步研究了EBL的光刻机理。进行了HOMO/LUMO轨道能量的理论计算、循环伏安法和荧光猝灭实验，以证实Pyr - Boc与光酸发生器之间的电子转移反应。该研究为EBL提供了一种高灵敏度和抗蚀刻光刻胶的选择。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/cfd1cdff9d8d/ao4c01044_0007.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/07a066079692/ao4c01044_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/d7fb09efe556/ao4c01044_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/a85636b9010b/ao4c01044_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/6ba532ed4825/ao4c01044_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/cfd1cdff9d8d/ao4c01044_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/66fadb0a3c66/ao4c01044_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/3f49f9cad858/ao4c01044_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/cac3c012feed/ao4c01044_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/07a066079692/ao4c01044_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/d7fb09efe556/ao4c01044_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/a85636b9010b/ao4c01044_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/6ba532ed4825/ao4c01044_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dad0/11391444/cfd1cdff9d8d/ao4c01044_0007.jpg

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本文引用的文献

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ACS Omega. 2023 Mar 21;8(13):12173-12182. doi: 10.1021/acsomega.2c08112. eCollection 2023 Apr 4.
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Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography.
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ACS Appl Mater Interfaces. 2023 Jan 11;15(1):2289-2300. doi: 10.1021/acsami.2c19940. Epub 2022 Dec 28.
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