Abdullah Md, Rahman Mohammad Saidur, Obayedullah Mohammad, Musfika Sawda Ahmed
Department of Mechanical Engineering, City University, Khagan, Savar, Dhaka, 1216, Bangladesh.
Department of Mechanical Engineering, Dhaka University of Engineering & Technology, Gazipur, 1707, Bangladesh.
Heliyon. 2024 Aug 24;10(17):e36896. doi: 10.1016/j.heliyon.2024.e36896. eCollection 2024 Sep 15.
A two-dimensional crystalline allotrope of boron, Borophene, has attracted much interest lately because of its unique electrical characteristics and possible uses in electronic devices. This thorough analysis examines the opportunities and difficulties related to the bandgap creation in boron, which is essential for its incorporation into semiconductor technologies. An introduction to the structural features of Borophene is given at the outset of the text, emphasizing its fascinating hexagonal lattice and tunable electronic properties. The review thoroughly explores the range of techniques used in synthesizing Borophene, covering both theoretical and experimental methods. It assesses how growth conditions, post-synthesis treatments, and substrate interactions affect the establishment of the bandgap in Borophene. The study also looks at how strain engineering, flaws, and impurities affect the bandgap, highlighting the necessity of exact control over these elements to get desirable electrical properties. We go into great length about the difficulties in Borophene bandgap engineering, including stability, scalability, and repeatability problems. The study critically evaluates the current body of knowledge, pointing out knowledge gaps and suggesting possible directions for further research. In addition, the paper discusses how external elements like humidity and temperature affect the stability of Borophene electrical characteristics, which complicates practical application. To sum up, this thorough analysis offers insightful information about the development of the borophene bandgap formation and a road map for scientists and engineers hoping to utilize borophene to its maximum potential in the future generation of electronic devices. The difficulties in synthesis and the complex interaction of several factors influencing bandgap creation highlight the necessity of ongoing multidisciplinary work to realize the technological potential of borophene.
硼的二维晶体同素异形体——硼烯，因其独特的电学特性以及在电子器件中的潜在应用，近来备受关注。本深入分析探讨了与硼中带隙形成相关的机遇和困难，这对于将其纳入半导体技术至关重要。文本开篇介绍了硼烯的结构特征，着重强调了其迷人的六边形晶格和可调节的电子特性。该综述全面探索了用于合成硼烯的一系列技术，涵盖理论和实验方法。它评估了生长条件、合成后处理以及与衬底的相互作用如何影响硼烯中带隙的形成。研究还考察了应变工程、缺陷和杂质对带隙的影响，突出了精确控制这些因素以获得理想电学性能的必要性。我们详细阐述了硼烯带隙工程中的困难，包括稳定性、可扩展性和重复性问题。该研究批判性地评估了当前的知识体系，指出知识空白并提出可能的进一步研究方向。此外，本文讨论了湿度和温度等外部因素如何影响硼烯电学特性的稳定性，这给实际应用带来了复杂性。总之，本深入分析提供了有关硼烯带隙形成发展的深刻见解，为希望在下一代电子器件中充分发挥硼烯潜力的科学家和工程师提供了路线图。合成中的困难以及影响带隙形成的多种因素的复杂相互作用凸显了持续开展多学科工作以实现硼烯技术潜力的必要性。
