Yim Chi Ming, Siemann Gesa-R, Stavrić Srdjan, Khim Seunghyun, Benedičič Izidor, Murgatroyd Philip A E, Antonelli Tommaso, Watson Matthew D, Mackenzie Andrew P, Picozzi Silvia, King Phil D C, Wahl Peter
SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife, KY16 9SS, UK.
Tsung Dao Lee Institute and School of Physics and Astronomy, Shanghai Jiao Tong University, 201210, Shanghai, China.
Nat Commun. 2024 Sep 16;15(1):8098. doi: 10.1038/s41467-024-52007-z.
Doping of a Mott insulator gives rise to a wide variety of exotic emergent states, from high-temperature superconductivity to charge, spin, and orbital orders. The physics underpinning their evolution is, however, poorly understood. A major challenge is the chemical complexity associated with traditional routes to doping. Here, we study the Mott insulating CrO layer of the delafossite PdCrO, where an intrinsic polar catastrophe provides a clean route to doping of the surface. From scanning tunnelling microscopy and angle-resolved photoemission, we find that the surface stays insulating accompanied by a short-range ordered state. From density functional theory, we demonstrate how the formation of charge disproportionation results in an insulating ground state of the surface that is disparate from the hidden Mott insulator in the bulk. We demonstrate that voltage pulses induce local modifications to this state which relax over tens of minutes, pointing to a glassy nature of the charge order.
对莫特绝缘体进行掺杂会产生各种各样奇异的涌现态,从高温超导到电荷、自旋和轨道序。然而,支撑它们演化的物理机制却知之甚少。一个主要挑战是与传统掺杂途径相关的化学复杂性。在这里,我们研究了铜铁矿型PdCrO中的莫特绝缘CrO层,其中内在的极性灾变为表面掺杂提供了一条纯净的途径。通过扫描隧道显微镜和角分辨光电子能谱,我们发现表面保持绝缘状态并伴有短程有序态。从密度泛函理论出发,我们证明了电荷 disproportionation 的形成如何导致表面的绝缘基态,该基态与体相中隐藏的莫特绝缘体不同。我们证明电压脉冲会对这种状态进行局部修改,这种修改会在数十分钟内弛豫,这表明电荷序具有玻璃态性质。