Gong Dan, Zhang Xi, Dai Xu, Tan Yongjia, Peng Yong, Xiang Gang
College of Physics, Sichuan University, Chengdu 610000, China.
School of Materials and Energy, Lanzhou University, Lanzhou 730000, China.
Nanoscale. 2024 Oct 17;16(40):18976-18983. doi: 10.1039/d4nr02869d.
Emergent ferromagnetism in β-GaO with an ultra-wide bandwidth and high electrical breakdown strength offers exciting opportunities for fabricating robust spintronic devices. One pertinent obstacle in the material has been the low saturation magnetization, which precludes its practical application in magnetic devices. In this work, large-scale Fe-doped β-GaO diluted magnetic semiconductor (DMS) films are synthesized using a polymer-assisted deposition method, and the effect of Fe doping on their structural and magnetic properties is investigated. Remarkably, the optimal sample exhibits a high saturation magnetization (70 emu cm at 300 K), much larger than those in previously reported stable oxide DMS films, as well as a low coercivity (12 Oe at 300 K). Further analysis shows that our samples manifest a typical bound magnetic polaron (BMP) model and the high saturation magnetization originates from the strong ferromagnetic coupling between the BMPs which is enhanced by Ga vacancies. The Fe-doped β-GaO thin films with high saturation magnetization and low coercivity may provide a promising platform for related semiconductor spintronics.
具有超宽带宽和高击穿电场强度的β-GaO中的新兴铁磁性为制造坚固的自旋电子器件提供了令人兴奋的机会。该材料中一个相关的障碍是低饱和磁化强度，这限制了其在磁性器件中的实际应用。在这项工作中，使用聚合物辅助沉积方法合成了大规模铁掺杂的β-GaO稀磁半导体（DMS）薄膜，并研究了铁掺杂对其结构和磁性的影响。值得注意的是，最佳样品表现出高饱和磁化强度（300 K时为70 emu/cm³），远高于先前报道的稳定氧化物DMS薄膜，以及低矫顽力（300 K时为12 Oe）。进一步分析表明，我们的样品表现出典型的束缚磁极化子（BMP）模型，高饱和磁化强度源于BMP之间的强铁磁耦合，而这种耦合因Ga空位而增强。具有高饱和磁化强度和低矫顽力的铁掺杂β-GaO薄膜可能为相关的半导体自旋电子学提供一个有前景的平台。
