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基于高阶非厄米拓扑物理的超灵敏集成电路传感器。

Ultrasensitive integrated circuit sensors based on high-order non-Hermitian topological physics.

作者信息

Deng Wenyuan, Zhu Wei, Chen Tian, Sun Houjun, Zhang Xiangdong

机构信息

Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements of Ministry of Education, Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China.

Beijing Key Laboratory of Millimeter Wave and Terahertz Techniques, School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China.

出版信息

Sci Adv. 2024 Sep 20;10(38):eadp6905. doi: 10.1126/sciadv.adp6905. Epub 2024 Sep 18.

DOI:10.1126/sciadv.adp6905
PMID:39292791
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11409973/
Abstract

High-precision sensors are of fundamental importance in modern society and technology. Although numerous sensors have been developed, obtaining sensors with higher levels of sensitivity and stronger robustness has always been expected. Here, we propose theoretically and demonstrate experimentally an alternative class of sensors with superior performances based on exotic properties of high-order non-Hermitian topological physics. The frequency shift induced by perturbations for these sensors can show an exponential growth with respect to the size of the device, which can grow well beyond the limitations of conventional sensors. The fully integrated circuit chips have been designed and fabricated in a standard 65-nanometer complementary metal-oxide semiconductor process technology. Not only has the sensitivity of systems less than 10 femtofarad been experimentally verified, but these systems are also robust against disorders. Our proposed ultrasensitive integrated circuit sensors can have a wide range of applications in various fields and show an exciting prospect for next-generation sensing technologies.

摘要

高精度传感器在现代社会和技术中具有至关重要的意义。尽管已经开发出了众多传感器,但人们一直期望获得具有更高灵敏度和更强鲁棒性的传感器。在此,我们基于高阶非厄米拓扑物理的奇异特性,从理论上提出并通过实验证明了一类具有卓越性能的新型传感器。这些传感器因微扰引起的频率偏移相对于器件尺寸可呈指数增长,其增长程度可远超传统传感器的限制。全集成电路芯片已采用标准的65纳米互补金属氧化物半导体工艺技术进行设计和制造。不仅系统灵敏度小于10飞法已通过实验验证,而且这些系统对无序情况也具有鲁棒性。我们提出的超灵敏集成电路传感器可在各个领域有广泛应用,并为下一代传感技术展现出令人兴奋的前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/508f/11409973/1ea54809e3f6/sciadv.adp6905-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/508f/11409973/8dceb4f92507/sciadv.adp6905-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/508f/11409973/4be19e055f1d/sciadv.adp6905-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/508f/11409973/f58c97567303/sciadv.adp6905-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/508f/11409973/1ea54809e3f6/sciadv.adp6905-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/508f/11409973/8dceb4f92507/sciadv.adp6905-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/508f/11409973/4be19e055f1d/sciadv.adp6905-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/508f/11409973/f58c97567303/sciadv.adp6905-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/508f/11409973/1ea54809e3f6/sciadv.adp6905-f4.jpg

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本文引用的文献

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Adv Sci (Weinh). 2023 Jul;10(19):e2301128. doi: 10.1002/advs.202301128. Epub 2023 Apr 25.
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Geometric deep optical sensing.几何深度学习光学传感。
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