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掺杂哈伯德模型中赝能隙的起源与命运

Origin and fate of the pseudogap in the doped Hubbard model.

作者信息

Šimkovic Fedor, Rossi Riccardo, Georges Antoine, Ferrero Michel

机构信息

CPHT, CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, 91128 Palaiseau, France.

Collège de France, 11 place Marcelin Berthelot, 75005 Paris, France.

出版信息

Science. 2024 Sep 20;385(6715):eade9194. doi: 10.1126/science.ade9194.

DOI:10.1126/science.ade9194
PMID:39298591
Abstract

The relationship between the pseudogap and underlying ground-state phases has not yet been rigorously established. We investigated the doped two-dimensional Hubbard model at finite temperature using controlled diagrammatic Monte Carlo calculations, allowing for the computation of spectral properties in the infinite-size limit and with arbitrary momentum resolution. We found three distinct regimes as a function of doping and interaction strength: a weakly correlated metal, a correlated metal with strong interaction effects, and a pseudogap regime at low doping. We show that the pseudogap forms both at weak coupling, when the magnetic correlation length is large, and at strong coupling, when it is shorter. As the temperature goes to zero, the pseudogap regime extrapolates precisely to the ordered stripe phase found by ground-state methods.

摘要

赝能隙与潜在基态相之间的关系尚未得到严格确立。我们使用可控的图解蒙特卡罗计算方法研究了有限温度下的掺杂二维哈伯德模型,从而能够在无限尺寸极限下并以任意动量分辨率计算光谱性质。我们发现,作为掺杂和相互作用强度的函数,存在三种不同的区域:弱关联金属、具有强相互作用效应的关联金属以及低掺杂时的赝能隙区域。我们表明,赝能隙在磁关联长度较大时的弱耦合情况下以及磁关联长度较短时的强耦合情况下均会形成。随着温度趋于零,赝能隙区域精确外推至通过基态方法发现的有序条纹相。

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Origin and fate of the pseudogap in the doped Hubbard model.掺杂哈伯德模型中赝能隙的起源与命运
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