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通过形变势调制和巨大形变在N型BiTe中实现面向热电冷却的大功率因数

Thermoelectric Cooling-Oriented Large Power Factor Realized in N-Type BiTe Via Deformation Potential Modulation and Giant Deformation.

作者信息

Zhang Fudong, He Mingkai, Zhu Lujun, Jia Beiquan, Shi Yalin, Wang Weishuai, Peng Zhanhui, Liang Pengfei, Chao Xiaolian, Yang Zupei, Wu Di

机构信息

Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, China.

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China.

出版信息

Small. 2024 Dec;20(49):e2405182. doi: 10.1002/smll.202405182. Epub 2024 Sep 20.

Abstract

Thermoelectric refrigeration, utilizing Peltier effect, has great potential in all-solid-state active cooling field near room temperature. The performance of a thermoelectric cooling device is highly determined by the power factor of consisting materials besides the figure of merit. In this work, it is demonstrated that successive addition of Cu and Nd can realize non-trivial modulation of deformation potential in n-type room temperature thermoelectric material BiTeSe and result in a significant increment of electron mobility and remarkably enhanced power factor. Following giant hot deformation process improves grain texturing and strengthens inter-layer interaction in BiTeSe lattice, further pushing the power factor to ≈47 µW cm K at 300 K and maximal figure of merit ZT to ≈1.34 at 423 K with average ZT of ≈1.27 at 300-473 K. Moreover, robust compressive strength is enhanced to ≈146.6 MPa. The corresponding finite element simulations demonstrate large temperature differences ΔT of ≈70 K and a maximal coefficient of performance COP ≈ 10.6 (hot end temperature at 300 K), which can be achieved in a ten-pair thermoelectric cooling virtual module. The strategies and results as shown in this work can further advance the application of n-type BiTe for thermoelectric cooling.

摘要

利用珀尔帖效应的热电制冷在室温附近的全固态主动冷却领域具有巨大潜力。除了优值外,热电冷却器件的性能还高度取决于组成材料的功率因数。在这项工作中,证明了连续添加铜和钕可以实现对n型室温热电材料BiTeSe中形变势的显著调制,并导致电子迁移率显著增加以及功率因数显著提高。随后的巨大热变形过程改善了BiTeSe晶格中的晶粒织构并增强了层间相互作用,进一步将300 K时的功率因数提高到约47 μW cm K,423 K时的最大优值ZT提高到约1.34,300 - 473 K时的平均ZT约为1.27。此外,抗压强度增强到约146.6 MPa。相应的有限元模拟表明,在一个十对热电冷却虚拟模块中可以实现约70 K的大温差ΔT和最大性能系数COP≈10.6(热端温度为300 K)。这项工作中所示的策略和结果可以进一步推动n型BiTe在热电冷却中的应用。

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