Qiu Zhanxiong, Luo Zhongtong, Chen Meifei, Gao Wei, Yang Mengmeng, Xiao Ye, Huang Le, Zheng Zhaoqiang, Yao Jiandong, Zhao Yu, Li Jingbo
Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong 510006, P. R. China.
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, Guangdong 528200, P. R. China.
ACS Nano. 2024 Oct 1;18(39):27055-27064. doi: 10.1021/acsnano.4c10168. Epub 2024 Sep 20.
Photodetectors, essential for a wide range of optoelectronic applications in both military and civilian sectors, face challenges in balancing responsivity, detectivity, and response time due to their inherent unidirectional carrier transport mechanism. Multifunctional photodetectors that address these trade-offs are highly sought after for their potential to reduce costs, simplify system design, and surpass Moore's Law limitations. Herein, we present a multimodal phototransistor based on a 2D MoTe/InS heterostructure. Through dual electrical modulation employing bias voltage and gate voltage, we engineer the energy band to achieve switchable photoresponse mechanisms between photoconductive and photovoltaic modes. In photoconductive mode, the device exhibits a responsivity of 320 A/W and a specific detectivity of 1.2 × 10 Jones. Meanwhile, in photovoltaic mode, it exhibits a light on/off ratio of 2 × 10 and response speed of 0.68/0.60 ms. These capabilities enable multifunctional applications such as high-resolution imaging across various wavelengths, a conceptual optoelectronic logic gate, and dual-channel optical communication. This work makes an advancement in the development of future multifunctional optoelectronic devices.
光电探测器在军事和民用领域的广泛光电子应用中至关重要，但由于其固有的单向载流子传输机制，在平衡响应度、探测率和响应时间方面面临挑战。能够解决这些权衡问题的多功能光电探测器因其具有降低成本、简化系统设计以及突破摩尔定律限制的潜力而备受追捧。在此，我们展示了一种基于二维MoTe/InS异质结构的多模态光电晶体管。通过利用偏置电压和栅极电压进行双电调制，我们设计能带以实现光电导模式和光伏模式之间可切换的光响应机制。在光电导模式下，该器件的响应度为320 A/W，比探测率为1.2×10 Jones。同时，在光伏模式下，它的光开/关比为2×10，响应速度为0.68/0.60 ms。这些能力使其能够应用于多种功能，如跨各种波长的高分辨率成像、概念性光电子逻辑门以及双通道光通信。这项工作在未来多功能光电器件的发展方面取得了进展。
