Lee Juchan, Duong Ngoc Thanh, Bang Seungho, Park Chulho, Nguyen Duc Anh, Jeon Hobeom, Jang Jiseong, Oh Hye Min, Jeong Mun Seok
Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Nano Lett. 2020 Apr 8;20(4):2370-2377. doi: 10.1021/acs.nanolett.9b04926. Epub 2020 Mar 11.
We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe and MoTe with gate-controlled junction modes. Owing to the interband tunneling current, our device can act as an Esaki diode and a backward diode with a peak-to-valley current ratio approaching 5.7 at room temperature. Furthermore, under an 811 nm laser irradiation the heterostructure exhibits a photodetectivity of up to 7.5 × 10 Jones. In addition, to harness the electrostatic gate bias, can be tuned from negative to positive by switching from the accumulation mode to the depletion mode of the heterojunction. Additionally, a photovoltaic effect with a fill factor exceeding 41% was observed, which highlights the significant potential for optoelectronic applications. This study not only demonstrates high-performance multifunctional optoelectronics based on the SnSe/MoTe heterostructure but also provides a comprehensive understanding of broken-band alignment and its applications.
我们研究了由SnSe和MoTe组成的具有栅极控制结模式的带隙断裂异质结的电子和光电特性。由于带间隧穿电流，我们的器件可以作为埃萨基二极管和反向二极管，在室温下峰谷电流比接近5.7。此外，在811 nm激光照射下，异质结构的光探测率高达7.5×10琼斯。此外，为了利用静电栅极偏压，可以通过从异质结的积累模式切换到耗尽模式将其从负调至正。此外，还观察到填充因子超过41%的光伏效应，这突出了其在光电应用中的巨大潜力。这项研究不仅展示了基于SnSe/MoTe异质结构的高性能多功能光电器件，还提供了对带隙断裂对准及其应用的全面理解。
