Park Junghyun, Xu Jiayou, Engler Anthony, Williamson Jaimal, Mathew Varughese, Park Sunggook, Flake John
Gordon A. and Mary Cain Department of Chemical Engineering, Louisiana State University, Baton Rouge, LA 70803 USA.
Texas Instruments Incorporated, Dallas, TX 75243 USA.
IEEE Trans Compon Packaging Manuf Technol. 2024 Jun;14(6):984-992. doi: 10.1109/tcpmt.2024.3399662. Epub 2024 May 9.
Future multichip packages require Die-to-Die (D2D) interconnects operating at frequencies above 10 GHz; however, the extension of copper interconnects and epoxy dielectrics presents a trade-off between performance and reliability. This paper explores insertion losses and adhesion as a function of interface roughness at frequencies up to 18 GHz. We probe epoxy surface chemistry as a function of curing time and use wet etching to modulate surface roughness. The morphology is quantified by atomic force microscopy (AFM) and two-dimensional fast Fourier transform (2D FFT). Peel test and vector network analysis are used to examine the impacts of both type and level of roughness. The trade-offs between power efficiency and reliability are presented and discussed.
未来的多芯片封装需要芯片到芯片（D2D）互连在高于10 GHz的频率下运行；然而，铜互连和环氧电介质的扩展在性能和可靠性之间存在权衡。本文探讨了在高达18 GHz频率下插入损耗和附着力与界面粗糙度的关系。我们研究了环氧表面化学与固化时间的关系，并使用湿法蚀刻来调节表面粗糙度。通过原子力显微镜（AFM）和二维快速傅里叶变换（2D FFT）对形态进行量化。使用剥离试验和矢量网络分析来研究粗糙度类型和程度的影响。本文提出并讨论了功率效率和可靠性之间的权衡。
