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用于增强氧化钨薄膜光电催化活性的液相沉积工艺优化

Optimizations of Liquid Phase Deposition Processes for Enhanced Photoelectrocatalytic Activities of Tungsten Oxide Thin Films.

作者信息

Nareejun Watcharapong, Ponchio Chatchai, Mizuhata Minoru, Minamimoto Hiro

机构信息

Department of Chemistry, Faculty of Science and Technology, Rajamangala University of Technology Thanyaburi, Khlong 6, Thanyaburi, Pathum Thani 12120, Thailand.

Advanced Photochemical and Electrochemical Materials (APEM) Research Unit, Faculty of Science and Technology, Rajamangala University of Technology Thanyaburi, Klong 6, Thanyaburi, Khlong Hok, Pathum Thani 12110, Thailand.

出版信息

ACS Omega. 2024 Sep 4;9(37):38788-38797. doi: 10.1021/acsomega.4c04738. eCollection 2024 Sep 17.

Abstract

This study focuses on the preparation of tungsten oxide (WO) as the photoanode for water oxidations by the liquid phase deposition (LPD) technique and its optimizations to improve the photoelectrochemical performance. The alternative precursor large stock solution process was achieved to simplify the LPD process for WO thin film preparation. The effect of boric acid in the precursor solutions on the physicochemical properties of the deposited WO thin films was investigated. As a result, we found that the optimized concentration of boric acid realized the highest photoelectrochemical performance. Through the optimizations of reaction conditions and surface analyses, we concluded that the preparations of a semiconductor film via the LPD technique had the potential to obtain high-performance photoelectrocatalytic applications.

摘要

本研究聚焦于通过液相沉积(LPD)技术制备氧化钨(WO)作为水氧化的光阳极,并对其进行优化以提高光电化学性能。实现了替代前驱体大储备溶液工艺,以简化用于制备WO薄膜的LPD工艺。研究了前驱体溶液中硼酸对沉积的WO薄膜物理化学性质的影响。结果,我们发现硼酸的优化浓度实现了最高的光电化学性能。通过反应条件的优化和表面分析,我们得出结论,通过LPD技术制备半导体薄膜有潜力获得高性能的光电催化应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/069f/11411532/f03d6b4bf8a3/ao4c04738_0001.jpg

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