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g-ZnO/CdX(X = S、Se、Te)范德华异质结构的电子结构和光学性质的第一性原理研究

First-principles study of the electronic structures and optical properties of g-ZnO/CdX (X = S, Se, Te) van der Waals heterostructures.

作者信息

Ren Xinle, Huang Yan, Zhang Xiaozhe, Su Junhong, Sun Shaodong

机构信息

Xi'an Technological University, No.2 Xuefuzhonglu Road,Weiyang District, Xi'an, Shaanxi, 710021, CHINA.

Xi'an Technological University, No.2 Xuefuzhonglu Road,Weiyang District, Xi'an, 710021, CHINA.

出版信息

J Phys Condens Matter. 2024 Sep 25. doi: 10.1088/1361-648X/ad7fb3.

Abstract

The stability, electronic structures and optical properties of g-ZnO/CdX (X = S, Se, Te) heterostructures are studied by density functional theory. It is found that the stable monolayers spacing of the corresponding heterostructure decreases with the increase of the X atomic radius in the CdX monolayers. The constructed g-ZnO/CdX heterostructures all belong to direct band gap, 2.12 eV, 2.09 eV and 1.99 eV, respectively. Electrostatic potential results show that the two monolayers form an internal electric field at the heterostructure interface, and can inhibit the recombination of photogenerated electron hole pairs, and effectively extend the carrier lifetime. Charge density difference analysis shows that charge redistribution mainly occurs in the interfacial region. The optical properties show that the absorption of g-ZnO in the visible range is achieved by heterostructure. In general, with the smallest band gap and the strongest built-in electric field, g-ZnO/CdTe could have the best carrier separation efficiency. And the optical property analysis proves that the g-ZnO/CdTe heterostructure system has the highest utilization ratio of visible light. The above results show that the electronic structure and optical properties of g-ZnO/CdTe heterostructure are the best, and it can be inferred that this heterostructure will be the most beneficial to improve the photocatalytic activity of g-ZnO, providing a new direction for its application in the field of photocatalysis.

摘要

采用密度泛函理论研究了g-ZnO/CdX(X = S、Se、Te)异质结构的稳定性、电子结构和光学性质。研究发现,相应异质结构的稳定单层间距随着CdX单层中X原子半径的增加而减小。构建的g-ZnO/CdX异质结构均属于直接带隙,分别为2.12 eV、2.09 eV和1.99 eV。静电势结果表明,两层单层在异质结构界面处形成内电场,能够抑制光生电子空穴对的复合,并有效延长载流子寿命。电荷密度差分析表明,电荷重新分布主要发生在界面区域。光学性质表明,通过异质结构实现了g-ZnO在可见光范围内的吸收。总体而言,g-ZnO/CdTe具有最小的带隙和最强的内建电场,可能具有最佳的载流子分离效率。并且光学性质分析证明g-ZnO/CdTe异质结构体系具有最高的可见光利用率。上述结果表明g-ZnO/CdTe异质结构的电子结构和光学性质最佳,可以推断这种异质结构将最有利于提高g-ZnO的光催化活性,为其在光催化领域的应用提供新的方向。

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