Sakowski Konrad, Strak Pawel, Kempisty Pawel, Piechota Jacek, Grzegory Izabella, Perlin Piotr, Monroy Eva, Kaminska Agata, Krukowski Stanislaw
Institute of Applied Mathematics and Mechanics, University of Warsaw, 02-097 Warsaw, Poland.
Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland.
Materials (Basel). 2024 Sep 18;17(18):4581. doi: 10.3390/ma17184581.
A nonradiative recombination channel is proposed, which does not vanish at low temperatures. Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination, is reformulated to accommodate Coulomb attraction between the charged deep defect and the approaching free carrier. It is demonstrated that this effect may cause a considerable increase in the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that, in a typical semiconductor device or semiconductor medium, the SRH recombination rate at low temperatures is much higher and cannot be neglected. This effect renders invalid the standard procedure of estimating the radiative recombination rate by measuring the light output in cryogenic temperatures, as a significant nonradiative recombination channel is still present. We also show that SRH is more effective in the case of low-doped semiconductors, as effective screening by mobile carrier density could reduce the effect.
提出了一种在低温下不会消失的非辐射复合通道。缺陷介导的非辐射复合，即肖克利-里德-霍尔（SRH）复合，被重新表述以适应带电深缺陷与接近的自由载流子之间的库仑吸引力。结果表明，这种效应可能会使接近复合中心的载流子速度显著增加。该效应大大提高了载流子俘获率。结果表明，在典型的半导体器件或半导体介质中，低温下的SRH复合率要高得多且不可忽略。由于仍然存在显著的非辐射复合通道，这种效应使得通过测量低温下的光输出估计辐射复合率的标准程序无效。我们还表明，在低掺杂半导体的情况下，SRH更有效，因为移动载流子密度的有效屏蔽可以降低这种效应。
