Mo Peizhen, Cheng Jinyan, Xu Qiuchen, Liu Hongru, Wang Chengyong, Li Suyang, Yuan Zhishan
School of Electro-Mechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China.
Guangdong Provincial Key Laboratory of Minimally Invasive Surgical Instruments and Manufacturing Technology, Guangdong University of Technology, Guangzhou 510006, China.
Micromachines (Basel). 2024 Aug 30;15(9):1105. doi: 10.3390/mi15091105.
Nanogrooves with high aspect ratios possess small size effects and high-precision optical control capabilities, as well as high specific surface area and catalytic performance, demonstrating significant application value in the fields of optics, semiconductor processes, and biosensing. However, existing manufacturing methods face issues such as complexity, high costs, low efficiency, and low precision, especially in the difficulty of fabricating nanogrooves with high resolution on the nanoscale. This study proposes a method based on focused ion beam technology and a layer-by-layer etching process, successfully preparing V-shaped and rectangular nanogrooves on a silicon dioxide substrate. Combining with cellular automaton algorithm, the ion sputtering flux and redeposition model was simulated. By converting three-dimensional grooves to discrete rectangular slices through a continuous etching process and utilizing the sputtering and redeposition effects of gallium ion beams, high-aspect-ratio V-shaped grooves with up to 9.6:1 and rectangular grooves with nearly vertical sidewalls were achieved. In addition, the morphology and composition of the V-shaped groove sidewall were analyzed in detail using transmission electron microscopy (TEM) and tomography techniques. The influence of the etching process parameters (ion current, dwell time, scan times, and pixel overlap ratio) on groove size was analyzed, and the optimized process parameters were obtained.
具有高纵横比的纳米槽具有小尺寸效应和高精度光学控制能力,以及高比表面积和催化性能,在光学、半导体工艺和生物传感等领域展现出显著的应用价值。然而,现有的制造方法面临着诸如复杂性、高成本、低效率和低精度等问题,特别是在纳米尺度上制造高分辨率纳米槽存在困难。本研究提出了一种基于聚焦离子束技术和逐层蚀刻工艺的方法,成功地在二氧化硅衬底上制备出了V形和矩形纳米槽。结合元胞自动机算法,对离子溅射通量和再沉积模型进行了模拟。通过连续蚀刻过程将三维凹槽转换为离散的矩形切片,并利用镓离子束的溅射和再沉积效应,实现了高达9.6:1的高纵横比V形凹槽和具有近乎垂直侧壁的矩形凹槽。此外,利用透射电子显微镜(TEM)和断层扫描技术详细分析了V形凹槽侧壁的形貌和成分。分析了蚀刻工艺参数(离子电流、驻留时间、扫描次数和像素重叠率)对凹槽尺寸的影响,并获得了优化的工艺参数。