Zhang Yujie, Zhi Changle, Dong Gang
School of Microelectronics, Xidian University, Xi'an 710000, China.
Micromachines (Basel). 2024 Sep 3;15(9):1127. doi: 10.3390/mi15091127.
In this paper, we first build the 3D model of coaxial TSV(CTSV), RDL, and bump of the CTSV interconnect, and extract the equivalent circuit model of each part. Then, we get the -parameters of the 3D and equivalent circuit model of the CTSV interconnect structure; the validity of the equivalent circuit model is verified by comparing the consistency of the -parameters. The simulation results show that the maximum errors for the and parameters are 0.4% and 0.18%, respectively, which proves the validity of the equivalent circuit modeling in this paper. Finally, parametric analysis is performed to investigate the effect of different model parameters on the signal-transmission characteristics of the CTSV interconnect.
在本文中，我们首先构建了同轴硅通孔（CTSV）、再分布层（RDL）以及CTSV互连凸块的三维模型，并提取了各部分的等效电路模型。然后，我们获取了CTSV互连结构的三维模型和等效电路模型的S参数；通过比较S参数的一致性来验证等效电路模型的有效性。仿真结果表明，S11和S21参数的最大误差分别为0.4%和0.18%，这证明了本文中等效电路建模的有效性。最后，进行参数分析以研究不同模型参数对CTSV互连信号传输特性的影响。
