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可调谐双层次纳米结构的一步干法蚀刻制备

One-Step Dry-Etching Fabrication of Tunable Two-Hierarchical Nanostructures.

作者信息

Ji Xu, Wang Bo, Zhang Zhongshan, Xiang Yuan, Yang Haifang, Pan Ruhao, Li Junjie

机构信息

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, China.

出版信息

Micromachines (Basel). 2024 Sep 17;15(9):1160. doi: 10.3390/mi15091160.

Abstract

Two-hierarchical nanostructures, characterized by two distinct configurations along the height direction, exhibit immense potential for applications in various fields due to their significantly enhanced controllable degree compared to single-order structures. However, due to the limitations imposed by planar technology, the realization of two-hierarchical nanostructures encounters huge challenges. In this work, we developed a one-step etching method based on inductively coupled plasma reactive ion etching for two-hierarchical nanostructures. Thanks to the shrinking effect of the Cr mask and the generation of a passivation layer during etching, the target materials experienced two different states from vertical etching to shrink etching. Consequently, the achieved two-hierarchical nanostructure configuration features a cross-section of an upper triangle and a lower rectangle, showing higher controllable degrees compared to the one-order ones. Both the mask pattern and etching parameters play crucial roles, by which two-hierarchical structures with diversiform shapes can be constructed controllably. This method for two-hierarchical nanostructures offers advantages including excellent control over structural properties, high processing efficiency, uniformity across large areas, and universality in materials. This developed strategy not only presents a simple and rapid nanofabrication platform for realizing optoelectronic devices, but also provides innovative ideas for designing the next generation of high-performance devices.

摘要

具有沿高度方向两种不同构型的二维分层纳米结构,由于其与单级结构相比具有显著增强的可控程度,在各个领域展现出巨大的应用潜力。然而,由于平面技术的限制,二维分层纳米结构的实现面临巨大挑战。在这项工作中,我们基于电感耦合等离子体反应离子刻蚀开发了一种用于二维分层纳米结构的一步刻蚀方法。得益于Cr掩膜的收缩效应以及刻蚀过程中钝化层的产生,目标材料经历了从垂直刻蚀到收缩刻蚀的两种不同状态。因此,所实现的二维分层纳米结构构型具有上三角形和下矩形的横截面,与单级结构相比显示出更高的可控程度。掩膜图案和刻蚀参数都起着关键作用,通过它们可以可控地构建出形状多样的二维分层结构。这种用于二维分层纳米结构的方法具有诸多优点,包括对结构性能的出色控制、高加工效率、大面积的均匀性以及材料的通用性。这种开发的策略不仅为实现光电器件提供了一个简单快速的纳米制造平台,也为设计下一代高性能器件提供了创新思路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/03a2/11434419/673aa81f8bde/micromachines-15-01160-g001.jpg

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